参数资料
型号: IRS2108STRPBF
厂商: International Rectifier
文件页数: 1/25页
文件大小: 0K
描述: IC DRIVER HALF-BRIDGE 8-SOIC
标准包装: 1
配置: 半桥
输入类型: 反相和非反相
延迟时间: 220ns
电流 - 峰: 290mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
产品目录页面: 1382 (CN2011-ZH PDF)
其它名称: IRS2108STRPBFDKR
HALF-BRIDGE DRIVER
? Tolerant to negative transient voltage, dV/dt
immune
?
?
Data Sheet No. PD60260
IRS2108 / IRS21084(S)PbF
Features
? Floating channel designed for bootstrap operation Packages
? Fully operational to +600 V
8-Lead PDIP
? Gate drive supply range from 10 V to 20 V
? Undervoltage lockout for both channels 14-Lead PDIP
? 3.3 V, 5 V, and 15 V input logic compatible
? Cross-conduction prevention logic
? Matched propagation delay for both channels
? High - side output in phase with HIN input
? Low - side output out of phase with LIN input
? Logic and power ground +/- 5 V offset
? Internal 540 ns deadtime, and programmable up 8-Lead SOIC 14-Lead SOIC
to 5 μ s with one external R DT resistor (IRS21084)
Lower di/dt gate driver for better noise immunity
RoHS compliant
Description
Feature Comparison
The IRS2108/IRS21084 are high volt-
age, high speed power MOSFET and
IGBT drivers with dependent high - and
Part
Input
logic
Cross-
conduction
prevention
Deadtime
(ns)
Ground Pins
ton/toff
(ns)
low - side referenced output channels.
Proprietary HVIC and latch immune
2106/2301
21064
logic
HIN/LIN no none
COM
V SS /COM
220/200
CMOS technologies enable ruggedized
monolithic construction. The logic input
is compatible with standard CMOS or
LSTTL output, down to 3.3 V logic. The
2108 Internal 540 COM
HIN/LIN yes
21084 Programmable 540 - 5000 V SS /COM
2109/2302 Internal 540 COM
IN/SD yes
21094 Programmable 540 - 5000 V SS /COM
2304 HIN/LIN yes Internal 100 COM
220/200
750/200
160/140
output drivers feature a high pulse cur-
rent buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high - side configuration which operates up to 600 V.
Typical Connection
V CC
up to 600 V
V CC
V B
HIN
HIN
HO
LIN
LIN
COM
V S
LO
TO
LOAD
up to 600 V
IRS2108
HO
IRS21084
V CC
V CC
V B
HIN
HIN
V S
TO
(Refer to Lead Assignments for correct pin
configuration). These diagrams show
electrical connections only. Please refer to
our Application Notes and DesignTips for
LIN
V SS
R DT
LIN
DT
V SS
COM
LO
LOAD
proper circuit board layout.
www.irf.com
1
相关PDF资料
PDF描述
IRS21091STRPBF IC DRIVER HALF BRIDGE 8-SOIC
IRS2109SPBF IC HALF BRIDGE DRIVER 8-SOIC
IRS2111PBF IC DRIVER HALF-BRIDGE 8-DIP
IRS2112SPBF IC DRIVER HI/LOW SIDE 16-SOIC
IRS2113MPBF IC DRIVER HIGH/LOW SIDE 16MLPQ
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参数描述
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IRS21091SPBF 功能描述:功率驱动器IC HALF BRDG DRVR 600V 750ns 120mA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21091STRPBF 功能描述:功率驱动器IC Hlf Brdg Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21094PBF 功能描述:功率驱动器IC Hlf Brdg Drvr Sft Trn On Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21094SPBF 功能描述:功率驱动器IC HALF BRDG DRVR 600V 120mA 540ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube