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| 型号： | IRS2112SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/19页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HI/LOW SIDE 16-SOIC |
| 标准包装： | 45 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 135ns |
| 电流 - 峰： | 290mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
Data Sheet No. PD60251
IRS2112( - 1, - 2,S)PbF
HIGH AND LOW SIDE DRIVER
Features
? Floating channel designed for bootstrap operation Product Summary
? Fully operational to +600 V
? Tolerant to negative transient voltage, dV/dt V OFFSET 600 V max.
?
?
?
?
?
?
?
?
?
?
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V logic compatible
Separate logic supply range from 3.3 V to 20 V
Logic and power ground +/- 5 V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
RoHS compliant
I O +/-
V OUT
t on/off (typ.)
Delay Matching
Packages
200 mA / 440 mA
10 V - 20 V
135 ns & 105 ns
30 ns
Description
The IRS2112 is a high voltage, high speed power
MOSFET and IGBT driver with independent high- and
low-side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs, down
to 3.3 V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched
14-Lead PDIP
IRS2112
16-Lead PDIP
(w/o leads 4 & 5)
IRS2112-2
14-Lead PDIP
(w/o lead 4)
IRS2112-1
16-Lead SOIC
IRS2112S
to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration
which operates up to 600 V.
Typical Connection
HO
up to 600 V
V DD
V DD
V B
HIN
HIN
V S
TO
SD
LIN
V SS
V CC
SD
LIN
V SS
V CC
COM
LO
LOAD
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2112STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr ShutDwn Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2113-1PBF | 制造商:International Rectifier 功能描述:IC HIGH/LOW SIDE DRIVER DIP14 |
| IRS2113-2PBF | 制造商:International Rectifier 功能描述:IC HIGH/LOW SIDE DRIVER DIP16 |
| IRS2113MPBF | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2113MTRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr All HiVolt Pins 1 Sd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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