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参数资料
| 型号： | IRS2112SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/19页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HI/LOW SIDE 16-SOIC |
| 标准包装： | 45 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 135ns |
| 电流 - 峰： | 290mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
IRS2112(-1,-2,S)PbF
Dynamic Electrical Characteristics
V BIAS (V CC , V BS , V DD ) = 15 V, C L = 1000 pF, T A = 25 °C and V SS = COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Fig. 3.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
t on
Turn-on propagation delay
—
135
180
V S = 0 V
t off
t sd
t r
t f
MT
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS Turn-on/off
—
—
—
—
—
130
130
75
35
—
160
160
130
65
30
ns
V S = 600 V
Static Electrical Characteristics
V BIAS (V CC , V BS , V DD ) = 15 V, T A = 25 °C and V SS = COM unless otherwise specified. The V IN , V TH , and I IN parameters
are referenced to V SS and are applicable to all three logic input leads: HIN, LIN, and SD. The V O and I O parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V IH
V IL
Logic “1” input voltage
Logic “0” input voltage
9.5
—
—
—
—
6.0
V OH
V OL
I LK
I QBS
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
—
—
—
—
0.05
0.02
—
25
0.2
0.1
50
100
V
I O = 2 mA
V B = V S = 600 V
I QCC
I QDD
I IN+
I IN-
V BSUV+
V BSUV-
V CCUV+
V CCUV-
Quiescent V CC supply current
Quiescent V DD supply current
Logic “1” input bias current
Logic “0” input bias current
V BS supply undervoltage positive going
threshold
V BS supply undervoltage negative going
threshold
V CC supply undervoltage positive going
threshold
V CC supply undervoltage negative going
threshold
—
—
—
—
7.4
7.0
7.6
7.2
80
2.0
20
—
8.5
8.1
8.6
8.2
180
30
40
1.0
9.6
9.2
9.6
9.2
μA
V
V IN = 0 V or V DD
V IN = V DD
V IN = 0 V
I O+
I O-
Output high short circuit pulsed current
Output low short circuit pulsed current
200
420
290
600
—
—
mA
V O = 0 V, V IN = V DD
PW ≤ 10 μs
V O = 15 V, V IN = 0 V
PW ≤ 10 μs
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