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参数资料
| 型号： | IRS2113MPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/22页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HIGH/LOW SIDE 16MLPQ |
| 标准包装： | 92 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 130ns |
| 电流 - 峰： | 2.5A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 供应商设备封装： | 16-MLPQ（4x4） |
| 包装： | 管件 |
February 8, 2012
IRS2113MPBF
HIGH- AND LOW-SIDE DRIVER
Features
Product Summary
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Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage – dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V input logic compatible
Separate logic supply range from 3.3 V to 20 V
Logic and power ground ±5 V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Output in phase with inputs
Leadfree, RoHS Compliant
Topology
V OFFSET
V OUT
I o+ & I o- (typical)
t ON & t OFF (typical)
Delay Matching
Package Option
2 channels
600 V max
10 V – 20 V
2.5 A / 2.5 A
130 ns & 120 ns
20 ns max
Description
The IRS2113MPBF is a high voltage, high speed power
MOSFET and IGBT drivers with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable
MLPQ4x4-16-Lead
(without 2 leads)
ruggedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3 V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched to
simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which
operates up to 600 V.
Typical Connection Diagram
(Refer to Leads Assignment for correct pin configurations) This diagram shows electrical connections only.
Please refer to our Application Notes and Design Tips for proper circuit board layout.
www.irf.com
? 2008 International Rectifier
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PDF描述 |
|---|---|
| IRS2113SPBF | IC DRIVER HIGH/LOW SIDE 16-SOIC |
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| IRS2124STRPBF | IC DVR HI SIDE 600V 500MA 8-SOIC |
| IRS21271STRPBF | IC DVR CURRENT SENSE 1CH 8-SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2113MTRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr All HiVolt Pins 1 Sd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2113PBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr All HiVolt Pins 1 Sd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2113SPBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 2A 120ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2113STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr All HiVolt Pins 1 Sd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2117 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SINGLE CHANNEL DRIVER |
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