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参数资料
| 型号： | IRS2113MPBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/22页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HIGH/LOW SIDE 16MLPQ |
| 标准包装： | 92 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 130ns |
| 电流 - 峰： | 2.5A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 供应商设备封装： | 16-MLPQ（4x4） |
| 包装： | 管件 |
IRS2113MPBF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The thermal resistance and power
dissipatio n ratings are measured under board mounted and still air conditions.
Symbol
Definition Min. Max. Units
V B
V S
V HO
High-side floating supply voltage
High-side floating supply offset voltage
High-side floating output voltage
-0.3
V B - 20
V S - 0.3
625
V B + 0.3
V B + 0.3
V CC
V LO
V DD
V SS
V IN
dV S /dt
Low-side fixed supply voltage
Low-side output voltage
Logic supply voltage
Logic supply offset voltage
Logic input voltage (HIN, LIN & SD)
Allowable offset supply voltage transient (Fig. 2)
-0.3
-0.3
-0.3
V CC - 20
V SS -0.3
—
25
V CC + 0.3
V SS + 20 (?)
V CC + 0.3
V DD + 0.3
50
V
V/ns
P D
Package power dissipation @ TA ≤ 25°C — 2.08
W
Rth JA
Thermal resistance, junction to ambient —
36
°C/W
T J
Junction temperature — 150
T S
T L
Storage temperature -55 150
Lead temperature (soldering, 10 seconds) — 300
°C
? All supplies are fully tested at 25 V, and an internal 20 V clamp exists for each supply.
Recommended Operating Conditions
The input/output logic timing diagram is shown in Figure 1. For proper operation the device should be
used within the recommended conditions. The V S and V SS offset rating are tested with all supplies biased
at 15 V differential.
Symbol
V B
V S
Definition
High-side floating supply absolute voltage
High-side floating supply offset voltage
Min.
V S +10
?
Max.
V S +20
600
Units
V HO
High-side floating output voltage V S
V B
V CC
V LO
V DD
Low-side fixed supply voltage 10 20
Low-side output voltage 0 V CC
Logic supply voltage V SS + 3 V SS + 20
V
V SS
Logic ground offset voltage
-5 (??)
5
V IN
Logic input voltage (HIN, LIN & SD) V SS
V DD
T A
Ambient temperature -40 125
°C
?
Logic operational for V S of -4 V to +500 V. Logic state held for V S of -4 V to – V BS.
(Please refer to the Design Tip DT97 -3 for more details).
?? When V DD < 5 V, the minimum V SS offset is limited to –V DD .
www.irf.com
3
? 2012 International Rectifier
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| IRS2113MTRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr All HiVolt Pins 1 Sd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2113PBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr All HiVolt Pins 1 Sd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2113SPBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 2A 120ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2113STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr All HiVolt Pins 1 Sd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2117 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SINGLE CHANNEL DRIVER |
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