参数资料
型号: IRS2111STRPBF
厂商: International Rectifier
文件页数: 1/16页
文件大小: 0K
描述: IC DRIVER HALF-BRIDGE 8-SOIC
标准包装: 1
配置: 半桥
输入类型: 反相和非反相
延迟时间: 750ns
电流 - 峰: 290mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
其它名称: IRS2111STRPBFDKR
Data Sheet No. PD60253
IRS2111(S)PbF
HALF-BRIDGE DRIVER
Features
? Floating channel designed for bootstrap operation
? Fully operational to +600 V
? Tolerant to negative transient voltage, dV/dt
immune
? Gate drive supply range from 10 V to 20 V
? Undervoltage lockout for both channels
? CMOS Schmitt-triggered inputs with pull-down
? Matched propagation delay for both channels
? Internally set deadtime
? High-side output in phase with input
? RoHS compliant
Description
Product Summary
V OFFSET 600 V max.
I O +/- 200 mA / 420 mA
V OUT 10 V - 20 V
t on/off (typ.) 750 ns & 150 ns
Deadtime (typ.) 650 ns
Packages
The IRS2111 is a high voltage, high speed power MOSFET and
IGBT driver with dependent high-side and low-side referenced
output channels designed for half-bridge applications. Propri-
etary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic input is compatible
with standard CMOS outputs. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-
conduction. Internal deadtime is provided to avoid shoot-through
in the output half-bridge. The floating channel can be used to
8-Lead PDIP
IRS2111PbF
8-Lead SOIC
IRS21111SPbF
drive an N-channel power MOSFET or IGBT in the high-side con-
figuration which operates up to 600 V.
Typical Connection
up to 600 V
V CC
V CC
V B
IN
IN
HO
COM
V S
TO
LOAD
LO
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1
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