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参数资料
| 型号： | IRS2111STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF-BRIDGE 8-SOIC |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 750ns |
| 电流 - 峰： | 290mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | IRS2111STRPBFDKR |
IRS2111(S)PbF
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, C L = 1000 pF and T A = 25 °C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Fig. 3.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
ton
toff
tr
tf
DT
MT
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Deadtime, LS turn-off to HS turn-on &
HS turn-off to LS turn-on
Delay matching, HS & LS turn-on/off
550
—
—
—
480
—
750
150
75
35
650
30
950
180
130
65
820
—
ns
V S = 0 V
V S = 600 V
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V and T A = 25 °C unless otherwise specified. The V IN , V TH, and I IN parameters are referenced to
COM. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
6.4
—
—
V CC = 10 V
V IH
Logic “1” input voltage for HO & logic “0” for LO
9.5
12.6
—
—
—
—
—
—
3.8
V CC = 15 V
V CC = 20 V
V CC = 10 V
V IL
Logic “0” input voltage for HO & logic “1” for LO
—
—
6.0
V
V CC = 15 V
—
—
8.3
V CC = 20 V
V OH
V OL
I LK
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
—
—
—
0.05
0.02
—
0.2
0.1
50
I O = 2 mA
V B = V S = 600 V
I QBS
I QCC
I IN+
I IN-
V BSUV+
V BSUV-
V CCUV+
V CCUV-
I O+
I O-
Quiescent V BS supply current
Quiescent V CC supply current
Logic “1” input bias current
Logic “0” input bias current
V BS supply undervoltage positive going threshold
V BS supply undervoltage negative going threshold
V CC supply undervoltage positive going threshold
V CC supply undervoltage negative going threshold
Output high short circuit pulsed current
Output low short circuit pulsed current
—
—
—
—
7.6
7.2
7.6
7.2
200
420
50
70
30
—
8.6
8.2
8.6
8.2
290
600
100
180
50
5.0
9.6
9.2
9.6
9.2
—
—
μA
V
mA
V IN = 0 V or V CC
V IN = V CC
V IN = 0 V
V O = 0 V, V IN = V CC
PW ≤ 10 μs
V O = 15 V, V IN = 0 V
PW ≤ 10 μs
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2112-1PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER |
| IRS2112-2PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER |
| IRS2112PBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr ShutDwn Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2112PBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC |
| IRS2112SPbF | 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 200mA 135ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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