参数资料
型号: IRS2117PBF
厂商: International Rectifier
文件页数: 11/26页
文件大小: 0K
描述: IC DRIVER MOSFET/IGBT 1CH 8-DIP
标准包装: 50
配置: 高端
输入类型: 非反相
延迟时间: 125ns
电流 - 峰: 290mA
配置数: 1
输出数: 1
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-DIP
包装: 管件
产品目录页面: 1382 (CN2011-ZH PDF)
IRS211(7,71,8)(S)
Tolerant to Negative V S Transients
A common problem in today’s high-power switching converters is the transient response of the switch node’s
voltage as the power switches transition on and off quickly while carrying a large current. A typical half bridge
circuit is shown in Figure 5; here we define the power switches and diodes of the inverter.
If the high-side switch (e.g., Q1 in Figures 6 and 7) switches off, while the current is flowing to a load, a current
commutation occurs from high-side switch (Q1) to the diode (D2) in parallel with the low-side switch of the
inverter. At the same instance, the voltage node V S swings from the positive DC bus voltage to the negative
DC bus voltage.
DC+ BUS
Q1
D1
Input
Voltage
V S
To
Load
Q2
D2
DC- BUS
Figure 5: Half Bridge Circuit
DC+ BUS
Q1
OFF
D1
V S
I L
Q2
OFF
DC- BUS
D2
Figure 6: Q1 conducting
Figure 7: D2 conducting
Also when the current flows from the load back to the inverter (see Figures 8 and 9), and Q2 switches on, the
current commutation occurs from D1 to Q2. At the same instance, the voltage node V S swings from the positive
DC bus voltage to the negative DC bus voltage.
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? 2008 International Rectifier
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