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| 型号： | IRS21531DPBF |
| 厂商： | International Rectifier |
| 文件页数： | 9/14页 |
| 文件大小： | 0K |
| 描述： | IC DRVR SELF-OSC HALF BRG 8-DIP |
| 标准包装： | 50 |
| 配置： | 半桥 |
| 输入类型： | 自振荡 |
| 电流 - 峰： | 180mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 15.4 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
IRS2153(1)D
Functional Description
Under-voltage Lock-Out Mode (UVLO)
The under-voltage lockout mode (UVLO) is defined as the state
the IC is in when V CC is below the turn-on threshold of the IC. The
IRS2153(1)D under voltage lock-out is designed to maintain an
ultra low supply current of less than 170 μ A, and to guarantee the
IC is fully functional before the high and low side output drivers
are activated. During under voltage lock-out mode, the high and
low-side driver outputs HO and LO are both low.
Supply voltage
+ AC Rectified Line
RVCC
Bootstrap MOSFET
The internal bootstrap FET and supply capacitor (C BOOT ) comprise
the supply voltage for the high side driver circuitry. The internal
boostrap FET only turns on when LO is high. To guarantee that
the high-side supply is charged up before the first pulse on pin
HO, the first pulse from the output drivers comes from the LO pin.
Normal operating mode
Once the V CCUV+ threshold is passed, the MOSFET M1 opens, RT
increases to approximately V CC (V CC -V RT+) and the external CT
capacitor starts charging. Once the CT voltage reaches V CT -
(about 1/3 of V CC ), established by an internal resistor ladder, LO
turns on with a delay equivalent to the deadtime (t d ). Once the CT
voltage reaches V CT+ (approximately 2/3 of V CC ), LO goes low, RT
goes down to approximately ground (V RT- ), the CT capacitor
discharges and the deadtime circuit is activated. At the end of the
VCC
RT
1
2
8
7
VB
HO
CBOOT
MHS
deadtime, HO goes high. Once the CT voltage reaches V CT-, HO
goes low, RT goes high again, the deadtime is activated. At the
end of the deadtime, LO goes high and the cycle starts over
again.
CVCC
RT
CT
3
6
VS
L
The following equation provides the oscillator frequency:
CT
RL
COM
4
5
LO
MLS
f ~
1
1 . 453 × RT × CT
- AC Rectified Line
Fig. 1 Typical Connection Diagram
Fig. 1 shows an example of supply voltage. The start-up capacitor
(C VCC ) is charged by current through supply resistor (R VCC ) minus
the start-up current drawn by the IC. This resistor is chosen to
provide sufficient current to supply the IRS2153(1)D from the DC
bus. C VCC should be large enough to hold the voltage at Vcc
above the UVLO threshold for one half cycle of the line voltage as
it will only be charged at the peak, typically 0.1 uF. It will be
necessary for R VCC to dissipate around 1 W.
The use of a two diode charge pump made of DC1, DC2 and
CVS (Fig. 2) from the half bridge (V S ) is also possible however
the above approach is simplest and the dissipation in R VCC should
not be unacceptably high.
+ AC Rectified Line
RVCC
This equation can vary slightly from actual measurements due to
internal comparator over- and under-shoot delays. For a more
accurate determination of the output frequency, the frequency
characteristic curves should be used (RT vs. Frequency, page 3).
Shut-down
If CT is pulled down below VCTSD (approximately 1/6 of V CC ) by
an external circuit, CT doesn’t charge up and oscillation stops.
LO is held low and the bootstrap FET is off. Oscillation will
resume once CT is able to charge up again to V CT- .
VCC
RT
1
2
8
7
VB
HO
CBOOT
MHS
DC2
CVCC
RT
CT
3
6
VS
L
CT
CVS
RL
COM
4
5
LO
MLS
DC1
- AC Rectified Line
Fig. 2 Charge pump circuit
The supply resistor (R VCC ) must be selected such that enough
supply current is available over all operating conditions.
Once the capacitor voltage on V CC reaches the start-up threshold
V CCUV+ , the IC turns on and HO and LO begin to oscillate.
9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS21531DSPbF | 功能描述:功率驱动器IC SELF-OSCILLATING HALF BRDG DRVR 600V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21531DSTRPBF | 功能描述:功率驱动器IC Self-Osc Half Bridge Drvr 1.1us RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2153D | 制造商:IRF 制造商全称:International Rectifier 功能描述:SELF-OSCILLATING HALF-BRIDEGE DRIVER IC |
| IRS2153DPBF | 功能描述:功率驱动器IC Self-Osc Half Bridge Drvr 1.1us RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2153DSPBF | 功能描述:功率驱动器IC SELF-OSCILLATING HALF BRDG DRVR 600V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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