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参数资料
| 型号： | IRS2334STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 12/33页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 1,000 |
| 系列： | * |
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IRS2334SPbF/MPbF
Application Information and Additional Details
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IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Shoot-Through Protection
Under-Voltage Lockout Protection
Truth Table: Under-Voltage lockout
Advanced Input Filter
Short-Pulse and Noise Rejection
Tolerant to Negative V S Transients
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS2334 HVIC is designed to drive high side and low side MOSFET or IGBT power devices. Figures 1 and 2
show the definition of some of the relevant parameters associated with the gate driver output functionality. The
output current that drives the gate of the external power switches is defined as I O . The output voltage that drives
the gate of the external power switches is defined as V HO for the high side and V LO for the low side; this
parameter is sometimes generically called V OUT and in this case the high side and low side output voltages are
not differentiated.
V B
(or V CC )
H
I O+
V B
(or V CC )
H
(or LO)
+
V H (or V L )
(or LO)
I O -
(or
V S
)
-
(or
V S
)
Figure 1: HVIC sourcing current
www.irf.com
12
Figure 2: HVIC sinking current
? 2010 International Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2336 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364D | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DJPBF | 功能描述:功率驱动器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS23364DJPBF | 制造商:International Rectifier 功能描述:Driver IC |
| IRS23364DJTRPBF | 功能描述:功率驱动器IC 600V 3Phs Drvr w/Gt Drv 12-20V NegVs Tol RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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