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参数资料
| 型号： | IRS2334STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 20/33页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 1,000 |
| 系列： | * |
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IRS2334SPbF/MPbF
The circuit shown in Figure 19 depicts one leg of the three phase inverter; Figures 20 and 21 show a simplified
illustration of the commutation of the current between Q1 and D2. The parasitic inductances in the power circuit
from the die bonding to the PCB tracks are lumped together in L C and L E for each IGBT. When the high-side
switch is on, V S1 is below the DC+ voltage by the voltage drops associated with the power switch and the
parasitic elements of the circuit. When the high-side power switch turns off, the load current momentarily flows in
the low-side freewheeling diode due to the inductive load connected to V S1 (the load is not shown in these
figures). This current flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load and a
negative voltage between V S1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential
than the V S pin).
Figure 19: Parasitic Elements
Figure 20: V S positive
Figure 21: V S negative
In a typical motor drive system, dV/dt is typically designed to be in the range of 3-5 V/ns. The negative V S
transient voltage can exceed this range during some events such as short circuit and over-current shutdown,
when di/dt is greater than in normal operation.
International Rectifier’s HVICs have been designed for the robustness required in many of today’s demanding
applications. An indication of the IRS2334’s robustness can be seen in Figure 22, where there is represented the
IRS2334 Safe Operating Area at V BS =15V based on repetitive negative V S spikes. A negative V S transient voltage
falling in the grey area (outside SOA) may lead to IC permanent damage; vice versa unwanted functional
anomalies or permanent damage to the IC do not appear if negative Vs transients fall inside SOA.
At V BS =15V in case of -V S transients greater than -16.5 V for a period of time greater than 50 ns; the HVIC will
hold by design the high-side outputs in the off state for 4.5 μ s.
www.irf.com
20
? 2010 International Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2336 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364D | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DJPBF | 功能描述:功率驱动器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS23364DJPBF | 制造商:International Rectifier 功能描述:Driver IC |
| IRS23364DJTRPBF | 功能描述:功率驱动器IC 600V 3Phs Drvr w/Gt Drv 12-20V NegVs Tol RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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