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| 型号： | IRS23364DSTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 22/49页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER HV 3PHASE 28-SOIC |
| 标准包装： | 1 |
| 配置： | 3 相桥 |
| 输入类型： | 差分 |
| 延迟时间： | 530ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 3 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 11.5 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 28-SOIC W |
| 包装： | 标准包装 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
| 其它名称： | IRS23364DSTRPBFDKR |
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IRS2336x(D) Family
Undervoltage Lockout Protection
This family of ICs provides undervoltage lockout protection on both the V CC (logic and low-side circuitry) power supply
and the V BS (high-side circuitry) power supply. Figure 9 is used to illustrate this concept; V CC (or V BS ) is plotted over
time and as the waveform crosses the UVLO threshold (V CCUV+/- or V BSUV+/- ) the undervoltage protection is enabled or
disabled.
Upon power-up, should the V CC voltage fail to reach the V CCUV+ threshold, the IC will not turn-on. Additionally, if the
V CC voltage decreases below the V CCUV- threshold during operation, the undervoltage lockout circuitry will recognize a
fault condition and shutdown the high- and low-side gate drive outputs, and the FAULT pin will transition to the low
state to inform the controller of the fault condition.
Upon power-up, should the V BS voltage fail to reach the V BSUV threshold, the IC will not turn-on. Additionally, if the V BS
voltage decreases below the V BSUV threshold during operation, the undervoltage lockout circuitry will recognize a fault
condition, and shutdown the high-side gate drive outputs of the IC.
The UVLO protection ensures that the IC drives the external power devices only when the gate supply voltage is
sufficient to fully enhance the power devices. Without this feature, the gates of the external power switch could be
driven with a low voltage, resulting in the power switch conducting current while the channel impedance is high; this
could result in very high conduction losses within the power device and could lead to power device failure.
Figure 9: UVLO protection
Shoot-Through Protection
The IRS2336xD family of high-voltage ICs is equipped with shoot-through protection circuitry (also known as cross-
conduction prevention circuitry). Figure 10 shows how this protection circuitry prevents both the high- and low-side
switches from conducting at the same time. Table 1 illustrates the input/output relationship of the devices in the form
of a truth table. Note that the IRS2336(D) has inverting inputs (the output is out-of-phase with its respective input)
while the IRS23364D has non-inverting inputs (the output is in-phase with its respective input).
www.irf.com
22
? 2009 International Rectifier
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PDF描述 |
|---|---|
| IRS2336STRPBF | IC GATE DRIVER HV 3PHASE 28-SOIC |
| IRS2108PBF | IC DRIVER HALF-BRIDGE 8-DIP |
| IR4427PBF | IC DRIVER DUAL LOW SIDE 8DIP |
| R1S8-2409/P-R | CONV DC/DC 1W 24VIN 09VOUT |
| R1S8-2405/P-R | CONV DC/DC 1W 24VIN 05VOUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS23365DMTRPBF | 制造商:International Rectifier 功能描述:CIC MLPQ 7X7 48L - Tape and Reel 制造商:International Rectifier 功能描述:IC DRIVER BRIDGE 3-PHASE 44MLPQ 制造商:International Rectifier 功能描述:T&R / CIC MLPQ 7X7 48L |
| IRS2336D | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS2336DJPBF | 功能描述:功率驱动器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2336DJPBF | 制造商:International Rectifier 功能描述:DRIVER IC |
| IRS2336DJTRPBF | 功能描述:功率驱动器IC 600V 3Phs Drvr IC w/Intgr BSF & Prot RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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