参数资料
型号: IRS2509SPBF
厂商: International Rectifier
文件页数: 14/21页
文件大小: 0K
描述: IC MOSFET DRIVER
标准包装: 95
系列: *
IRS2509SPbF
Figures 23-45 provide information on the experimental performance of the IRS2509 HVIC. The line plotted in each figure is
generated from actual lab data. A large number of individual samples from multiple wafer lots were tested at three
temperatures (-40 oC, 25 oC, and 125 oC) in order to generate the experimental (Exp.) curve. The line labeled Exp. consist
of three data points (one data point at each of the tested temperatures) that have been connected together to illustrate the
understood trend. The individual data points on the curve were determined by calculating the averaged experimental value
of the parameter (for a given temperature).
1500
1200
500
400
900
600
300
0
Exp.
300
200
100
0
Exp.
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature ( C)
Temperature ( C)
250
200
150
100
o
Fig. 23. Turn-on Propagation Delay vs.
Temperature
Exp.
o
Fig. 24. Turn-off Propagation Delay vs.
Temperature
125
100
75
50
Exp.
50
0
25
0
`
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature ( o C)
Fig. 25. Turn-on Rise Time vs. Temperature
www.irf.com
Temperature ( o C)
Fig. 26. Turn-off Rise Time vs. Temperature
14
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