参数资料
型号: IRS2509SPBF
厂商: International Rectifier
文件页数: 6/21页
文件大小: 0K
描述: IC MOSFET DRIVER
标准包装: 95
系列: *
IRS2509SPbF
Application Information and Additional Details
I nformations regarding the following topics are included as subsections within this section of the datasheet.
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IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Shut down Input
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Negative V S Transient SOA
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS2509 HVIC is designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several parameters associated
with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the gate of the power switch, is defined as
I O . The voltage that drives the gate of the external power switch is defined as V HO for the high-side power switch and V LO for the low-
side power switch; this parameter is sometimes generically called V OUT and in this case does not differentiate between the high-side
or low-side output voltage.
Figure 1: HVIC sourcing current
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Figure 2: HVIC sinking current
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