参数资料
型号: IRS2608DSPBF
厂商: International Rectifier
文件页数: 19/26页
文件大小: 0K
描述: IC DVR HALF BRIDGE 600V 8-SOIC
标准包装: 95
配置: 半桥
输入类型: 差分
延迟时间: 250ns
电流 - 峰: 200mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
IRS2608DSPbF
Parameters trend in temperature
Figures 24-43 provide information on the experimental performance of the IRS2608D(S) HVIC. The line plotted in each
figure is generated from actual lab data. A large number of individual samples from multiple wafer lots were tested at three
temperatures (-40 oC, 25 oC, and 125 oC) in order to generate the experimental (Exp.) curve. The line labeled Exp. consist
of three data points (one data point at each of the tested temperatures) that have been connected together to illustrate the
understood trend. The individual data points on the curve were determined by calculating the averaged experimental value
of the parameter (for a given temperature).
500
400
500
400
300
200
100
0
Exp.
300
200
100
0
Exp.
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature ( C)
250
200
150
100
50
0
o
Fig. 24 Turn-on Propagation Delay vs.
Temperature
Exp.
125
100
75
50
25
0
Temperature ( o C)
Fig. 25. Turn-off Propagation Delay vs.
Temperature
Exp.
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature ( C)
Temperature ( C)
o
Fig. 26. Turn-on Rise Time vs. Temperature
www.irf.com
o
Fig. 27. Turn-off Rise Time vs. Temperature
19
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