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参数资料
| 型号： | IS41C4100-35T |
| 英文描述： | 1Mx4 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 1Mx4位动态RAM与江户页面模式 |
| 文件页数： | 2/21页 |
| 文件大小： | 250K |
| 代理商： | IS41C4100-35T |
IC41C4100
IC41LV4100
2
Integrated Circuit Solution Inc.
DR027-0A 09/05/2001
FEATURES
Extended Data-Out (EDO) Page Mode access cycle
TTL compatible inputs and outputs; tristate I/O
Refresh Interval: 1024 cycles /16 ms
Refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR),
Hidden
Single power supply:
5V ± 10% (IC41C4100)
3.3V ± 10% (IC41LV4100)
Industrail Temperature Range -40
o
C to 85
o
C
DESCRIPTION
The
ICSI
IC41C4100 and IC41LV4100 is a 1,048,576 x 4-bit
high-performance CMOS Dynamic Random Access Memories.
The IC41C4100 offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 1024 random accesses
within a single row with access cycle time as short as 12 ns per
4-bit word.
These features make the IC41C4100and IC41LV4100 ideally
suited for, digital signal processing, high-performance audio
systems, and peripheral applications.
The IC41C4100 is packaged in a 20-pin 300mil SOJ and 300mil
TSOP-2.
1M x 4 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. EDO Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-35
35
10
18
12
60
-50
50
14
25
20
90
-60
60
15
30
25
110
Unit
ns
ns
ns
ns
ns
PIN DESCRIPTIONS
A0-A9
Address Inputs
I/O0-3
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
CAS
Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
PIN CONFIGURATION
20 (26) Pin SOJ, TSOP
-
2
1
2
3
4
5
9
10
11
12
13
26
25
24
23
22
18
17
16
15
14
I/O0
I/O1
WE
RAS
A9
A0
A1
A2
A3
VCC
GND
I/O3
I/O2
CAS
OE
A8
A7
A6
A5
A4
相关PDF资料 |
PDF描述 |
|---|---|
| IS41C44002A | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002AS(L) | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002A | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002AS(L) | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41C4100-60J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-60JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002 | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41C44002-50J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002-50JI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
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