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参数资料
| 型号： | IS41LV16257-60K |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K × 16（4兆位）充满活力和快速页面模式内存 |
| 文件页数： | 6/20页 |
| 文件大小： | 760K |
| 代理商： | IS41LV16257-60K |
IC41C16257/IC41C16257S
IC41LV16257/IC41LV16257S
6
Integrated Circuit Solution Inc.
DR021-0A 08/11/2001
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
50
1
0 to +70
-40 to +85
–55 to +125
V
V
V
V
3.3V
5V
3.3V
V
CC
Supply Voltage
I
OUT
P
D
T
A
Output Current
Power DICSIpation
Operation Temperature
mA
W
o
C
o
C
o
C
Com.
Ind.
T
STG
Storage Temperature
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
3.3V
5V
3.3V
5V
3.3V
Com.
Ind.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–40
5.0
3.3
—
—
—
—
—
—
5.5
3.6
V
V
V
V
V
V
o
C
V
IH
Input High Voltage
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
V
IL
Input Low Voltage
T
A
Ambient Temperature
o
C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A8
Input Capacitance:
RAS
,
UCAS
,
LCAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O15
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
o
C, f = 1 MHz, V
CC
= 5.0V + 10%, or V
CC
= 3.3V + 10%.
相关PDF资料 |
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|---|---|
| IS41LV16257S-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV1665 | 64K x16 bit Dynamic RAM with Fast Page Mode |
| IS41LV1665-40K | 64K x16 bit Dynamic RAM with Fast Page Mode |
| IS41LV44002-50JI | x4 EDO Page Mode DRAM |
| IS41LV44002-50T | x4 EDO Page Mode DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41LV16257-60KI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-60T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-60TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257B | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257B-35K | 功能描述:动态随机存取存储器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube |
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