参数资料
型号: IS41LV16257-60K
英文描述: 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
中文描述: 256K × 16(4兆位)充满活力和快速页面模式内存
文件页数: 9/20页
文件大小: 760K
代理商: IS41LV16257-60K
IC41C16257/IC41C16257S
IC41LV16257/IC41LV16257S
Integrated Circuit Solution Inc.
DR021-0A 08/11/2001
9
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-35
-50
-60
Symbol Parameter
Min. Max.
Min. Max.
Min. Max.
Units
t
ACH
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
Fast Page Mode READ or WRITE
Cycle Time
(24)
Fast Page Mode
RAS
Pulse Width
Access Time from
CAS
Precharge
(15)
Fast Page Mode READ-WRITE Cycle Time
(24)
40
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
CAS
Setup Time (CBR REFRESH)
(30, 20)
CAS
Hold Time (CBR REFRESH)
(30, 21)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Refresh Period (512 Cycles)
Transition Time (Rise or Fall)
(2, 3)
15
15
15
ns
t
OEH
8
10
15
ns
t
DS
t
DH
t
RWC
t
RWD
0
6
0
8
0
ns
ns
ns
ns
10
140
80
80
45
125
70
t
CWD
t
AWD
t
PC
25
30
12
34
42
20
36
49
25
ns
ns
ns
t
RASP
t
CPA
t
PRWC
t
OFF
35
100K
21
15
50
47
3
100K
27
15
60
56
3
100K
34
15
ns
ns
ns
ns
3
t
CLCH
10
10
10
ns
t
CSR
t
CHR
t
ORD
8
8
0
10
10
0
10
10
0
ns
ns
ns
t
REF
t
T
1
8
1
8
1
8
ms
ns
50
50
50
AC TEST CONDITIONS
Output load:
Two TTL Loads and 50 pF (Vcc = 5.0V ±10%)
One TTL Load and 50 pF (Vcc = 3.3V ±10%)
Input timing reference levels: V
IH
= 2.4V, V
IL
= 0.8V (Vcc = 5.0V ±10%);
V
IH
= 2.0V, V
IL
= 0.8V (Vcc = 3.3V ±10%)
Output timing reference levels: V
OH
= 2.0V, V
OL
= 0.8V (Vcc = 5V ±10%, 3.3V ±10%)
相关PDF资料
PDF描述
IS41LV16257S-60K 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
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相关代理商/技术参数
参数描述
IS41LV16257-60KI 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16257-60T 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16257-60TI 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16257B 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16257B-35K 功能描述:动态随机存取存储器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube