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参数资料
| 型号： | IS41LV44004-50JI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 4M X 4 EDO DRAM, 50 ns, PDSO24 |
| 封装： | 0.300 INCH, SOJ-24 |
| 文件页数： | 1/19页 |
| 文件大小： | 157K |
| 代理商： | IS41LV44004-50JI |
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. D
06/24/01
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
IS41C4400X
IS41LV4400X SERIES
ISSI
FEATURES
Extended Data-Out (EDO) Page Mode access cycle
TTL compatible inputs and outputs
Refresh Interval:
– 2,048 cycles/32 ms
– 4,096 cycles/64 ms
Refresh Mode: RAS-Only,
CAS-before-RAS (CBR), and Hidden
Single power supply:
– 5V±10% or 3.3V ± 10%
Byte Write and Byte Read operation via two CAS
Industrial temperature range -40°C to 85°C
DESCRIPTION
The
ISSI 4400 Series is a 4,194,304 x 4-bit high-performance
CMOS
Dynamic Random Access Memory. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 2,048 or 4096
random accesses within a single row with access cycle
time as short as 20 ns per 4-bit word.
These features make the 4400 Series ideally suited for
high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The 4400 Series is packaged in a 24-pin 300-mil SOJ with
JEDEC standard pinouts.
4M x 4 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
JUNE, 2001
KEY TIMING PARAMETERS
Parameter
-50
-60
Unit
RAS Access Time (tRAC)50
60
ns
CAS Access Time (tCAC)13
15
ns
Column Address Access Time (tAA)25
30
ns
EDO Page Mode Cycle Time (tPC)20
25
ns
Read/Write Cycle Time (tRC)
84
104
ns
PRODUCT SERIES OVERVIEW
Part No.
Refresh
Voltage
IS41C44002
2K
5V ± 10%
IS41C44004
4K
5V ± 10%
IS41LV44002
2K
3.3V ± 10%
IS41LV44004
4K
3.3V ± 10%
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
I/O0
I/O1
WE
RAS
*A11(NC)
A10
A0
A1
A2
A3
VCC
GND
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
GND
* A11 is NC for 2K Refresh devices
.
PIN DESCRIPTIONS
A0-A11
Address Inputs (4K Refresh)
A0-A10
Address Inputs (2K Refresh)
I/O0-3
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
CAS
Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
PIN CONFIGURATION
24 Pin SOJ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS41LV44004-50T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44004-50TI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44004-60J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44004-60JI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44004-60T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 EDO Page Mode DRAM |
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