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参数资料
| 型号： | IS42VS16160D-75BLI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封装： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件页数： | 1/61页 |
| 文件大小： | 939K |
| 代理商： | IS42VS16160D-75BLI |
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IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
Integrated Silicon Solution, Inc. — www.issi.com
1
Rev. 00A
04/21/09
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Clockfrequency:133,125MHz
Fullysynchronous;allsignalsreferencedtoa
positive clock edge
Internalbankforhidingrowaccess/precharge
SinglePowersupply:1.8V+0.1V
LVCMOSinterface
Programmableburstlength
–(1,2,4,8,fullpage)
Programmableburstsequence:
Sequential/Interleave
AutoRefresh(CBR)
SelfRefresh
8Krefreshcyclesevery16ms(A2grade)or
8Krefreshcyclesevery64ms(Commercial,
Industrial,A1grade)
Randomcolumnaddresseveryclockcycle
ProgrammableCASlatency(2,3clocks)
Burstread/writeandburstread/singlewrite
operations capability
Burstterminationbyburststopandprecharge
command
OPTIONS
Package:
54-pinTSOP-II(x8andx16)
54-ballTF-BGA(x16only)
OperatingTemperatureRange:
Commercial (0oC to +70oC)
Industrial (-40oCto+85oC)
AutomotiveGrade,A1(-40oCto+85oC)
AutomotiveGrade,A2(-40oCto+105oC)
DieRevision:D
OVERVIEW
ISSI's256MbSynchronousDRAMachieveshigh-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The256MbSDRAMisorganizedasfollows.
32Meg x 8, 16Meg x16
256-MBIT SYNCHRONOUS DRAM
PRELIMINARY INFORMATION
MAY 2009
KEY TIMING PARAMETERS
Parameter
-75
-8
Unit
ClkCycleTime
CAS
Latency=3
7.5
8
ns
CAS
Latency=2
10
ns
ClkFrequency
CAS
Latency=3
133
125
Mhz
CAS
Latency=2
100
Mhz
AccessTimefromClock
CAS
Latency=3
5.4
6
ns
CAS
Latency=2
8
ns
IS42VS83200D
IS42VS16160D
IS45VS83200D
IS45VS16160D
8Mx8x4Banks 4Mx16x4Banks
54-pinTSOPII
54-ballTF-BGA
Parameter
32M x 8
16M x 16
Configuration
8M x 8 x 4
banks
4M x 16 x 4
banks
Refresh Count
Com./Ind.
A1
A2
8K/64ms
8K/16ms
8K/64ms
8K/16ms
Row Addresses
A0-A12
Column Addresses
A0-A9
A0-A8
Bank Address Pins
BA0, BA1
Auto Precharge Pins
A10/AP
ADDRESS TABLE
相关PDF资料 |
PDF描述 |
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| IS45VS16160D-8BLA2 | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| IS43R32800B-5BL | 8M X 32 DDR DRAM, 0.7 ns, PBGA144 |
| IS61C512-25TI | x8 SRAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS42VS16400C1 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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