参数资料
型号: IS42VS16160D-75BLI
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封装: 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54
文件页数: 3/61页
文件大小: 939K
代理商: IS42VS16160D-75BLI
Integrated Silicon Solution, Inc. — www.issi.com
11
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
Current State
CS
RAS CAS
WE
Address
Command
Action
Readwithauto
H
×
DESL
Continuebursttoend,Precharge
Precharging
L
H
x
NOP
Continuebursttoend,Precharge
L
H
L
×
BST
ILLEGAL
L
H
L
H
BA,CA,A10
READ/READA
ILLEGAL(11)
L
H
L
BA,CA,A10
WRIT/WRITA
ILLEGAL(11)
L
H
BA,RA
ACT
ILLEGAL(3)
L
H
L
BA,A10
PRE/PALL
ILLEGAL(11)
L
H
×
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
WritewithAuto
H
×
DESL
Continuebursttoend,Write
Precharge
recoveringwithautoprecharge
L
H
×
NOP
Continuebursttoend,Write
recovering with auto precharge
L
H
L
×
BST
ILLEGAL
L
H
L
H
BA,CA,A10
READ/READA
ILLEGAL(11)
L
H
L
BA,CA,A10
WRIT/WRITA
ILLEGAL(11)
L
H
BA,RA
ACT
ILLEGAL(3,11)
L
H
L
BA,A10
PRE/PALL
ILLEGAL(3,11)
L
H
×
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
Precharging
H
×
DESL
Nop,EnteridleaftertRP
L
H
×
NOP
Nop,EnteridleaftertRP
L
H
L
×
BST
Nop,EnteridleaftertRP
L
H
L
H
BA,CA,A10
READ/READA
ILLEGAL(3)
L
H
L
BA,CA,A10
WRIT/WRITA
ILLEGAL(3)
L
H
BA,RA
ACT
ILLEGAL(3)
L
H
L
BA,A10
PRE/PALL
NopEnteridleaftertRP
L
H
×
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
RowActivating
H
×
DESL
Nop,EnterbankactiveaftertRCD
L
H
×
NOP
Nop,EnterbankactiveaftertRCD
L
H
L
×
BST
Nop,EnterbankactiveaftertRCD
L
H
L
H
BA,CA,A10
READ/READA
ILLEGAL(3)
L
H
L
BA,CA,A10
WRIT/WRITA
ILLEGAL(3)
L
H
BA,RA
ACT
ILLEGAL(3,9)
L
H
L
BA,A10
PRE/PALL
ILLEGAL(3)
L
H
×
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
FUNCTIONAL TRUTH TABLE Continued:
Note:H=Vih,L=Vilx=VihorVil,V=ValidData,BA=BankAddress,CA+ColumnAddress,RA=RowAddress,OC=Op-Code
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