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参数资料
| 型号： | IS42VS16160D-75BLI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封装： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件页数： | 19/61页 |
| 文件大小： | 939K |
| 代理商： | IS42VS16160D-75BLI |
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26
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
DON'T CARE
UNDEFINED
CLK
COMMAND
DQ
READ
NOP
CAS Latency - 3
tAC
tOH
DOUT
T0
T1
T2
T3
T4
tLZ
CLK
COMMAND
DQ
READ
NOP
CAS Latency - 2
tAC
tOH
DOUT
T0
T1
T2
T3
tLZ
CAS LATENCY
CAS Latency
TheCASlatencyisthedelay,inclockcycles,between
the registrationofaREADcommandandtheavailabilityof
thefirstpieceofoutputdata.Thelatencycanbesettotwoor
three clocks.
IfaREADcommandisregisteredatclockedgen,and
the latency is m clocks, the data will be available by clock
edge n + m.TheDQswillstartdrivingasaresultofthe
clock edge one cycle earlier (n + m -1),andprovidedthat
the relevant access times are met, the data will be valid by
clock edge n + m.Forexample,assumingthattheclock
cycle time is such that all relevant access times are met,
ifaREADcommandisregisteredatT0andthelatency
isprogrammedtotwoclocks,theDQswillstartdriving
afterT1andthedatawillbevalidbyT2,asshowninCAS
Latency diagrams.The Allowable Operating Frequency
tableindicatestheoperatingfrequenciesatwhicheach
CAS latency setting can be used.
Reservedstatesshouldnotbeusedasunknownoperation
or incompatibility with future versions may result.
CAS Latency
Allowable Operating Frequency (MHz)
Speed
CAS Latency = 2
CAS Latency = 3
-75
100
133
-8
100
125
Operating Mode
ThenormaloperatingmodeisselectedbysettingM7andM8
tozero;theothercombinationsofvaluesforM7andM8are
reservedforfutureuseand/ortestmodes.Theprogrammed
burstlengthappliestobothREADandWRITEbursts.
Testmodesandreservedstatesshouldnotbeusedbe-
cause unknown operation or incompatibility with future
versions may result.
Write Burst Mode
WhenM9=0,theburstlengthprogrammedviaM0-M2
appliestobothREADandWRITEbursts;whenM9=1,
theprogrammedburstlengthappliestoREADbursts,but
writeaccessesaresingle-location(nonburst)accesses.
相关PDF资料 |
PDF描述 |
|---|---|
| IS45VS16160D-8BLA2 | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| IS43R32800B-5BL | 8M X 32 DDR DRAM, 0.7 ns, PBGA144 |
| IS61C512-25TI | x8 SRAM |
| IS61C512-35J | x8 SRAM |
| IS61C512-35JI | x8 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS42VS16400C1 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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