- 您现在的位置：买卖IC网 > PDF目录296249 > IS42VS16160D-75BLI (INTEGRATED SILICON SOLUTION INC) 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 PDF资料下载
参数资料
| 型号： | IS42VS16160D-75BLI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封装： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件页数： | 18/61页 |
| 文件大小： | 939K |
| 代理商： | IS42VS16160D-75BLI |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页当前第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页
Integrated Silicon Solution, Inc. — www.issi.com
25
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
BURST DEFINITION
Burst
Starting Column
Order of Accesses Within a Burst
Length
Address
Type = Sequential
Type = Interleaved
A0
2
0
0-1
1
1-0
A1
A0
0
0-1-2-3
0-1-2-3
4
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
2-3-0-1
1
3-0-1-2
3-2-1-0
A2
A1
A0
0
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
8
0
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
Full n=A0-A8(x16)
Cn,Cn+1,Cn+2
NotSupported
Page n=A0-A9(x8)
Cn+3,Cn+4...
(y)
(location0-y)
…Cn-1,
Cn…
BURST LENGTH
ReadandwriteaccessestotheSDRAMareburstoriented,
with the burst length being programmable, as shown in
MODEREGISTERDEFINITION.Theburstlengthdeter-
minesthemaximumnumberofcolumnlocationsthatcan
beaccessedforagivenREADorWRITEcommand.Burst
lengthsof1,2,4or8locationsareavailableforboththe
sequentialandtheinterleavedbursttypes,andafull-page
burst is available for the sequential type.The full-page
burstisusedinconjunctionwiththeBURSTTERMINATE
command to generate arbitrary burst lengths.
Reservedstatesshouldnotbeused,asunknownoperation
or incompatibility with future versions may result.
WhenaREADorWRITEcommandisissued,ablockof
columnsequaltotheburstlengthiseffectivelyselected.All
accesses for that burst take place within this block, mean-
ing that the burst will wrap within the block if a boundary is
reached.TheblockisuniquelyselectedbyA1-A8(x16)or
A1-A9(x8)whentheburstlengthissettotwo;byA2-A8
(x16)orA2-A9(x8)whentheburstlengthissettofour;
andbyA3-A8(x16)orA3-A9(x8)whentheburstlength
issettoeight.Theremaining(leastsignificant)address
bit(s)is(are)usedtoselectthestartinglocationwithin
the block. Full-page bursts wrap within the page if the
boundary is reached.
BurstType
Accesses within a given burst may be programmed to be
eithersequentialorinterleaved;thisisreferredtoasthe
bursttypeandisselectedviabitM3.
Theorderingofaccesseswithinaburstisdeterminedby
the burst length, the burst type and the starting column
address,asshowninBURSTDEFINITIONtable.
相关PDF资料 |
PDF描述 |
|---|---|
| IS45VS16160D-8BLA2 | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| IS43R32800B-5BL | 8M X 32 DDR DRAM, 0.7 ns, PBGA144 |
| IS61C512-25TI | x8 SRAM |
| IS61C512-35J | x8 SRAM |
| IS61C512-35JI | x8 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS42VS16400C1 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
发布紧急采购，3分钟左右您将得到回复。