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参数资料
| 型号： | IS42VS16160D-75BLI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封装： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件页数： | 56/61页 |
| 文件大小： | 939K |
| 代理商： | IS42VS16160D-75BLI |
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6
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
PIN FUNCTIONS
Symbol
Type
Function (In Detail)
A0-A12
InputPin
AddressInputs:A0-A12aresampledduringtheACTIVEcommand(row-address
A0-A12)andREAD/WRITEcommand(columnaddressA0-A9(x8),orA0-A8(x16);
withA10definingautoprecharge)toselectonelocationoutofthememoryarrayin
therespectivebank.A10issampledduringaPRECHARGEcommandtodetermine
ifallbanksaretobeprecharged(A10HIGH)orbankselectedbyBA0,BA1(LOW).
Theaddressinputsalsoprovidetheop-codeduringaLOADMODEREGISTER
command.
BA0,BA1
InputPin
BankSelectAddress:BA0andBA1defineswhichbanktheACTIVE,READ,WRITE
orPRECHARGEcommandisbeingapplied.
CAS
InputPin
CAS
, in conjunction with the RAS and WE, forms the device command. See the
"CommandTruthTable"fordetailsondevicecommands.
CKE
InputPin
TheCKEinputdetermineswhethertheCLKinputisenabled.Thenextrisingedge
oftheCLKsignalwillbevalidwhenisCKEHIGHandinvalidwhenLOW.WhenCKE
isLOW,thedevicewillbeineitherpower-downmode,clocksuspendmode,orself
refresh mode. CKEisan asynchronous input.
CLK
InputPin
CLKisthemasterclockinputforthisdevice.ExceptforCKE,allinputstothisdevice
areacquiredinsynchronizationwiththerisingedgeofthispin.
CS
InputPin
TheCS input determines whether command input is enabled within the device.
Command input is enabled when CSisLOW,anddisabledwithCSisHIGH.The
device remains in the previous state when CSisHIGH.
DQML,
InputPin
DQMLandDQMHcontrolthelowerandupperbytesoftheI/Obuffers.Inread
DQMH
mode,DQMLandDQMHcontroltheoutputbuffer.WhenDQMLorDQMHisLOW,the
correspondingbufferbyteisenabled,andwhenHIGH,disabled.Theoutputsgoto
theHIGHimpedancestatewhenDQML/DQMHisHIGH.Thisfunctioncorrespondsto
OE
inconventionalDRAMs.Inwritemode,DQMLandDQMHcontroltheinputbuffer.
WhenDQMLorDQMHisLOW,thecorrespondingbufferbyteisenabled,anddata
canbewrittentothedevice.WhenDQMLorDQMHisHIGH,inputdataismasked
andcannotbewrittentothedevice.ForIS42VS16160Donly.
DQM
InputPin
ForIS42VS83200Donly.
DQ0-DQ7 or
Input/Output
DataontheDataBusislatchedonDQpinsduringWritecommands,andbufferedfor
DQ0-DQ15
outputafterReadcommands.
RAS
InputPin
RAS
, in conjunction with CAS and WE, forms the device command. See the "Com-
mandTruthTable"itemfordetailsondevicecommands.
WE
InputPin
WE
, in conjunction with RAS and CAS, forms the device command. See the "Com-
mandTruthTable"itemfordetailsondevicecommands.
Vddq
PowerSupplyPinVddq is the output buffer power supply.
Vdd
PowerSupplyPinVdd is the device internal power supply.
Vssq
PowerSupplyPinVssq is the output buffer ground.
Vss
PowerSupplyPinVss is the device internal ground.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS42VS16400C1 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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