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参数资料
| 型号： | IS42VS16160D-75BLI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封装： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件页数： | 12/61页 |
| 文件大小： | 939K |
| 代理商： | IS42VS16160D-75BLI |
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Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
DEVICE OVERVIEW
The 256Mb SDRAM is a high speed CMOS, dynamic
random-accessmemorydesignedtooperatein1.8VVdd
and1.8VVddq memorysystemscontaining268,435,456
bits.Internallyconfiguredasaquad-bankDRAMwitha
synchronousinterface.Each67,108,864-bitbankisorga-
nizedas8,192rowsby512columnsby16bitsor8,192
rowsby1,024columnsby8bits.
The256MbSDRAMincludesanAUTOREFRESHMODE,
and a power-saving, power-down mode. All signals are
registeredonthepositiveedgeoftheclocksignal,CLK.
AllinputsandoutputsareLVCMOScompatible.
The256MbSDRAMhastheabilitytosynchronouslyburst
data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during
burst access.
A self-timed row precharge initiated at the end of the burst
sequenceisavailablewiththeAUTOPRECHARGEfunction
enabled. Precharge one bank while accessing one of the
other three banks will hide the precharge cycles and provide
seamless, high-speed, random-access operation.
SDRAM read and write accesses are burst oriented starting
at a selected location and continuing for a programmed
number of locations in a programmed sequence. The
registration of an ACTIVE command begins accesses,
followedbyaREADorWRITEcommand.TheACTIVE
command in conjunction with address bits registered are
usedtoselectthebankandrowtobeaccessed(BA0,
BA1selectthebank;A0-A12selecttherow).TheREAD
or WRITE commands in conjunction with address bits
registered are used to select the starting column location
for the burst access.
ProgrammableREADorWRITEburstlengthsconsistof
1,2,4and8locationsorfullpage,withaburstterminate
option.
CLK
CKE
CS
RAS
CAS
WE
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
A10
A12
COMMAND
DECODER
&
CLOCK
GENERATOR
MODE
REGISTER
REFRESH
CONTROLLER
REFRESH
COUNTER
SELF
REFRESH
CONTROLLER
ROW
ADDRESS
LATCH
MUL
TIPLEXER
COLUMN
ADDRESSLATCH
BURSTCOUNTER
COLUMN
ADDRESSBUFFER
COLUMNDECODER
DATAIN
BUFFER
DATAOUT
BUFFER
DQML
DQMH
DQ0-15
VDD/VDDQ
Vss/VssQ
13
9
13
9
16
512
(x16)
8192
R
O
WDECODER
8192
MEMORYCELL
ARRAY
BANK 0
SENSEAMPI/OGATE
BANKCONTROLLOGIC
ROW
ADDRESS
BUFFER
A11
2
FUNCTIONAL BLOCK DIAGRAM (FOR 4Mx16x4 BANKS SHOWN)
相关PDF资料 |
PDF描述 |
|---|---|
| IS45VS16160D-8BLA2 | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| IS43R32800B-5BL | 8M X 32 DDR DRAM, 0.7 ns, PBGA144 |
| IS61C512-25TI | x8 SRAM |
| IS61C512-35J | x8 SRAM |
| IS61C512-35JI | x8 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS42VS16400C1 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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