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参数资料
| 型号： | IS42VS16160D-75BLI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封装： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件页数： | 42/61页 |
| 文件大小： | 939K |
| 代理商： | IS42VS16160D-75BLI |
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Integrated Silicon Solution, Inc. — www.issi.com
47
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
CLK
CKE
HIGH
ALL BANKS
BANK SELECT
BANK ADDRESS
CS
RAS
CAS
WE
A0-A9, A11,A12
A10
BA0, BA1
DON'T CARE
CLK
CKE
COMMAND
NOP
ACTIVE
≥ tCKS
tCKS
All banks idle
Enter power-down mode
Exit power-down mode
tRCD
tRAS
tRC
Input buffers gated off
less than 64ms
PRECHARGE Command
POWER-DOWN
Power-downoccursifCKEisregisteredLOWcoincident
withaNOPorCOMMANDINHIBITwhennoaccesses
are in progress. If power-down occurs when all banks are
idle,thismodeisreferredtoasprechargepower-down;
if power-down occurs when there is a row active in either
bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output
buffers,excludingCKE,formaximumpowersavingswhile
instandby.Thedevicemaynotremaininthepower-down
statelongerthantherefreshperiod(64ms)sincenorefresh
operations are performed in this mode.
Thepower-downstateisexitedbyregisteringaNOPor
COMMANDINHIBITandCKEHIGHatthedesiredclock
edge (meeting tcks).Seefigurebelow.
PRECHARGE
ThePRECHARGEcommand(seefigure)isusedtodeac-
tivate the open row in a particular bank or the open row in
allbanks.Thebank(s)willbeavailableforasubsequentrow
access some specified time (trp)afterthePRECHARGE
command is issued. Input A10 determines whether one or
all banks are to be precharged, and in the case where only
onebankistobeprecharged,inputsBA0,BA1selectthe
bank.Whenallbanksaretobeprecharged,inputsBA0,
BA1aretreatedas“Don’tCare.”Onceabankhasbeen
precharged, it is in the idle state and must be activated
priortoanyREADorWRITEcommandsbeingissuedto
that bank.
相关PDF资料 |
PDF描述 |
|---|---|
| IS45VS16160D-8BLA2 | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| IS43R32800B-5BL | 8M X 32 DDR DRAM, 0.7 ns, PBGA144 |
| IS61C512-25TI | x8 SRAM |
| IS61C512-35J | x8 SRAM |
| IS61C512-35JI | x8 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS42VS16400C1 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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