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参数资料
| 型号： | IS42S16400B-6T |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1梅格位× 16位× 4银行（64兆位）同步动态RAM |
| 文件页数： | 13/55页 |
| 文件大小： | 472K |
| 代理商： | IS42S16400B-6T |
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IS42S16400B
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
02/10/05
13
AC ELECTRICAL CHARACTERISTICS
(1,2,3)
-6
-7
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
CK3
t
CK2
Clock Cycle Time
CAS
Latency = 3
CAS
Latency = 2
6
—
—
7
—
—
ns
ns
10
10
t
AC3
t
AC2
Access Time From CLK
(4)
CAS
Latency = 3
CAS
Latency = 2
—
—
6
9
—
—
6
9
ns
ns
t
CHI
CLK HIGH Level Width
2
—
2.5
—
ns
t
CL
CLK LOW Level Width
2
—
2.5
—
ns
t
OH3
t
OH2
Output Data Hold Time
CAS
Latency = 3
CAS
Latency = 2
2.5
2.5
—
—
2.5
2.5
—
—
ns
ns
t
LZ
Output LOW Impedance Time
0
—
0
—
ns
t
HZ3
t
HZ2
Output HIGH Impedance Time
(5)
CAS
Latency = 3
CAS
Latency = 2
—
—
6
9
—
—
6
9
ns
ns
t
DS
Input Data Setup Time
1.5
—
1.5
—
ns
t
DH
Input Data Hold Time
0.8
—
0.8
—
ns
t
AS
Address Setup Time
1.5
—
1.5
—
ns
t
AH
Address Hold Time
0.8
—
0.8
—
ns
t
CKS
CKE Setup Time
1.5
—
1.5
—
ns
t
CKH
CKE Hold Time
0.8
—
0.8
—
ns
t
CKA
CKE to CLK Recovery Delay Time
1CLK+3
—
1CLK+3
—
ns
t
CS
Command Setup Time (
CS
,
RAS
,
CAS
,
WE
, DQM)
1.5
—
2.0
—
ns
t
CH
Command Hold Time (
CS
,
RAS
,
CAS
,
WE
, DQM)
0.8
—
1
—
ns
t
RC
Command Period (REF to REF / ACT to ACT)
60
—
63
—
ns
t
RAS
Command Period (ACT to PRE)
35
50,000
37
50,000
ns
t
RP
Command Period (PRE to ACT)
16
—
16
—
ns
t
RCD
Active Command To Read / Write Command Delay Time
16
—
16
—
ns
t
RRD
Command Period (ACT [0] to ACT[1])
14
—
14
—
ns
t
DPL3
Input Data To Precharge
Command Delay time
CAS
Latency = 3
2CLK
—
2CLK
—
ns
t
DPL2
CAS
Latency = 2
2CLK
—
2CLK
—
ns
t
DAL3
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
CAS
Latency = 3
2CLK+t
RP
—
2CLK+t
RP
—
ns
t
DAL2
CAS
Latency = 2
2CLK+t
RP
—
2CLK+t
RP
—
ns
t
T
Transition Time
1
10
1
10
ns
t
REF
Notes:
1. When power is first applied, memory operation should be started 100 μs after V
DD
and V
DDQ
reach their stipulated voltages.
Also note that the power-on sequence must be executed before starting memory operation.
2. Measured with t
T
= 1 ns.
3. The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between V
IH
(min.) and V
IL
(max.).
4. Access time is measured at 1.4V with the load shown in the figure below.
5. The time t
HZ
(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V
OH
(min.) or V
OL
(max.)
when the output is in the high impedance state.
Refresh Cycle Time (4096)
—
64
—
64
ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS42S16400B-6TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16400B-6TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400B-6TL-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16400B-7T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400B-7TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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