参数资料
型号: IS42S16400B-6T
厂商: Electronic Theatre Controls, Inc.
英文描述: 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 1梅格位× 16位× 4银行(64兆位)同步动态RAM
文件页数: 3/55页
文件大小: 472K
代理商: IS42S16400B-6T
IS42S16400B
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
02/10/05
3
PIN FUNCTIONS
Symbol
Pin No.
Type
Function (In Detail)
A0-A11
23 to 26
29 to 34
22, 35
Input Pin
Address Inputs: A0-A11 are sampled during the ACTIVE
command (row-address A0-A11) and READ/WRITE command (A0-A7
with A10 defining auto precharge) to select one location out of the memory array
in the respective bank. A10 is sampled during a PRECHARGE command to
determine if all banks are to be precharged (A10 HIGH) or bank selected by
BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD
MODE REGISTER command.
BA0, BA1
20, 21
Input Pin
Bank Select Address: BA0 and BA1 defines which bank the ACTIVE, READ,
WRITE or PRECHARGE command is being applied.
CAS
17
Input Pin
CAS
, in conjunction with the
RAS
and
WE
, forms the device command. See the
"Command Truth Table" for details on device commands.
CKE
37
Input Pin
The CKE input determines whether the CLK input is enabled. The next rising edge
of the CLK signal will be valid when is CKE HIGH and invalid when LOW. When
CKE is LOW, the device will be in either power-down mode, clock suspend mode,
or self refresh mode.
CKE is an
asynchronous i
nput.
CLK
38
Input Pin
CLK is the master clock input for this device. Except for CKE, all inputs to this
device are acquired in synchronization with the rising edge of this pin.
CS
19
Input Pin
The
CS
input determines whether command input is enabled within the device.
Command input is enabled when
CS
is LOW, and disabled with
CS
is HIGH. The
device remains in the previous state when
CS
is HIGH.
DQ0 to
DQ15
2, 4, 5, 7, 8, 10,
11,13, 42, 44, 45,
47, 48, 50, 51, 53
DQ Pin
DQ0 to DQ15 are I/O pins. I/O through these pins can be controlled in byte units
using the LDQM and UDQM pins.
LDQM,
UDQM
15, 39
Input Pin
LDQM and UDQM control the lower and upper bytes of the I/O buffers. In read
mode, LDQM and UDQM control the output buffer. When LDQM or UDQM is LOW, the
corresponding buffer byte is enabled, and when HIGH, disabled. The outputs go to the
HIGH impedance state when LDQM/UDQM is HIGH. This function corresponds to
OE
in conventional DRAMs. In write mode, LDQM and UDQM control the input buffer.
When LDQM or UDQM is LOW, the corresponding buffer byte is enabled, and data can
be written to the device. When LDQM or UDQM is HIGH, input data is masked and
cannot be written to the device.
RAS
18
Input Pin
RAS
, in conjunction with
CAS
and
WE
, forms the device command. See the "Command
Truth Table" item for details on device commands.
WE
16
Input Pin
WE
, in conjunction with
RAS
and
CAS
, forms the device command. See the "Command
Truth Table" item for details on device commands.
V
DDQ
3, 9, 43, 49
Power Supply Pin
V
DDQ
is the output buffer power supply.
V
DD
1, 14, 27
Power Supply Pin
V
DD
is the device internal power supply.
GND
Q
6, 12, 46, 52
Power Supply Pin
GND
Q
is the output buffer ground.
GND
28, 41, 54
Power Supply Pin
GND is the device internal ground.
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