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参数资料
| 型号： | IS61C64AH-25U |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K的× 8高速CMOS静态RAM |
| 文件页数： | 1/8页 |
| 文件大小： | 433K |
| 代理商： | IS61C64AH-25U |
Integrated Circuit Solution Inc.
1
SR001-B
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
FEATURES
High-speed access time: 15, 20, 25 ns
Automatic power-down when chip is
deselected
CMOS low power operation
— 450 mW (typical) operating
— 250 μW (typical) standby
TTL compatible interface levels
Single 5V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Two Chip Enables (
CE1
and CE2) for
simple memory expansion
IS61C64AH
8K x 8 HIGH-SPEED CMOS STATIC RAM
DESCRIPTION
The
ICSI
IS61C64AH is a very high-speed, low power,
8192-word by 8-bit static RAM. It is fabricated using
ICSI
's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 15 ns with low power consumption.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down to 250 μW (typical) with CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS61C64AH is packaged in the JEDEC standard 28-pin,
300mil SOJ and 330mil SOP.
FUNCTIONAL BLOCK DIAGRAM
A0-A12
CE1
OE
WE
256 X 256
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
CE2
相关PDF资料 |
PDF描述 |
|---|---|
| IS61C64AH | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-15J | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-15U | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-20J | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-20U | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C64AL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL_0610 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JLI | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61C64AL-10JLI-TR | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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