- 您现在的位置：买卖IC网 > PDF目录360985 > IS61C64AH-25U 8K x 8 HIGH-SPEED CMOS STATIC RAM PDF资料下载
参数资料
| 型号： | IS61C64AH-25U |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K的× 8高速CMOS静态RAM |
| 文件页数： | 6/8页 |
| 文件大小： | 433K |
| 代理商： | IS61C64AH-25U |
IS61C64AH
6
Integrated Circuit Solution Inc.
SR001-B
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-12 ns
-15 ns
-20 ns
-25 ns
Min.
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Max.
Unit
t
WC
Write Cycle Time
12
—
15
—
20
—
25
—
ns
t
SCE
1
CE1
to Write End
10
—
12
—
17
—
22
—
ns
t
SCE
2
CE2 to Write End
10
—
12
—
17
—
22
—
ns
t
AW
Address Setup Time to Write End
10
—
12
—
15
—
20
—
ns
t
HA
Address Hold from Write End
0
—
0
—
0
—
0
—
ns
t
SA
Address Setup Time
0
—
0
—
0
—
0
—
ns
t
PWE
(4)
WE
Pulse Width
8
—
10
—
12
—
15
—
ns
t
SD
Data Setup to Write End
8
—
9
—
10
—
12
—
ns
t
HD
Data Hold from Write End
0
—
0
—
0
—
0
—
ns
t
HZWE
(2)
WE
LOW to High-Z Output
—
6
—
8
—
10
—
12
ns
t
LZWE
(2)
WE
HIGH to Low-Z Output
0
—
0
—
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE1
LOW, CE2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
AC WAVEFORMS
WRITE CYCLE NO. 1
(
CE
Controlled,
OE
is HIGH or LOW)
(1 )
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE1
t
SCE2
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE1
CE2
WE
D
OUT
D
IN
DATA
IN
VALID
t
LZWE
t
SD
相关PDF资料 |
PDF描述 |
|---|---|
| IS61C64AH | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-15J | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-15U | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-20J | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AH-20U | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C64AL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL_0610 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JLI | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61C64AL-10JLI-TR | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。