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参数资料
| 型号： | IS61C64AL |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K的× 8高速CMOS静态RAM |
| 文件页数： | 7/13页 |
| 文件大小： | 105K |
| 代理商： | IS61C64AL |
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IS61C64AL
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/16/06
7
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCS
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
DATA
IN
VALID
t
LZWE
t
SD
CE_WR1.eps
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-10 ns
Min.
-12 ns
Min.
Symbol
t
WC
t
SCS
t
AW
Parameter
Max
Max.
Unit
Write Cycle Time
10
—
12
—
ns
CE
to Write End
9
—
10
—
ns
Address Setup Time
to Write End
9
—
10
—
ns
t
HA
Address Hold
from Write End
0
—
0
—
ns
t
SA
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Address Setup Time
0
—
0
—
ns
WE
Pulse Width (
OE
LOW)
9
—
9
—
ns
WE
Pulse Width (
OE
HIGH)
8
—
8
—
ns
Data Setup to Write End
7
—
7
—
ns
Data Hold from Write End
0
—
0
—
ns
WE
LOW to High-Z Output
—
6
—
6
ns
WE
HIGH to Low-Z Output
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61C64AL-10JI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JLI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10TI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10TLI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C64AL_0610 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10JLI | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61C64AL-10JLI-TR | 功能描述:静态随机存取存储器 64K 8Kx8 10ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61C64AL-10TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
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