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参数资料
| 型号： | IS61C64B |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K的× 8高速CMOS静态RAM |
| 文件页数： | 1/9页 |
| 文件大小： | 52K |
| 代理商： | IS61C64B |
IS61C64B
8K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/01/02
Copyright 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI
assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device
specification before relying on any published information and before placing orders for products.
FEATURES
High-speed access time: 10, 12, and 15 ns
Automatic power-down when chip is
deselected
CMOS low power operation
— 450 mW (typical) operating
— 250 μW (typical) standby
TTL compatible interface levels
Single 5V power supply
Fully static operation: no clock or refresh
required
Three state outputs
One Chip Enables (
CE
) for increased speed
DESCRIPTION
The
ISSI
IS61C64B is a very high-speed, low power,
8192-word by 8-bit static RAM. It is fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields ac-
cess times as fast as 10 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
250 μW (typical) with CMOS input levels.
Easy memory expansion is provided by using one Chip Enable
input,
CE
. The active LOW Write Enable (
WE
) controls both
writing and reading of the memory.
The IS61C64B is packaged in the JEDEC standard 28-pin,
300-mil SOJ, and TSOP.
FUNCTIONAL BLOCK DIAGRAM
A0-A12
CE
OE
WE
256 X 256
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
July 2002
相关PDF资料 |
PDF描述 |
|---|---|
| IS61C67-15N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-20N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-25N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-L15N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-L20N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C64B-10J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-10N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS61C64B-10T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS61C64B-12J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-12N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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