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参数资料
| 型号： | IS61C64B |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K的× 8高速CMOS静态RAM |
| 文件页数： | 4/9页 |
| 文件大小： | 52K |
| 代理商： | IS61C64B |
IS61C64B
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/01/02
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10 ns
-12 ns
Min. Max.
-15 ns
Symbol
Parameter
Test Conditions
Min. Max.
Min. Max.
Unit
I
CC
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA, f = f
MAX
—
185
—
175
—
135
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE1
V
IH
or
CE2 - V
IL
, f = 0
—
30
—
30
—
30
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
CC
= Max.,
CE1
V
CC
– 0.2V,
CE2 - 0.2V,
V
IN
V
CC
– 0.2V, or
V
IN
- 0.2V, f = 0
—
10
—
10
—
10
mA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
10
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C64B-10J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-10N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS61C64B-10T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS61C64B-12J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-12N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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