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参数资料
| 型号： | IS61C64B |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K的× 8高速CMOS静态RAM |
| 文件页数： | 8/9页 |
| 文件大小： | 52K |
| 代理商： | IS61C64B |
IS61C64B
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/01/02
WRITE CYCLE NO. 2 (
CE1
, CE2 Controlled)
(1,2)
HIGH-Z
DATA UNDEFINED
DATA-IN VALID
t
WC
t
SCE
t
SA
t
HA
t
PWE
t
AW
t
HZWE
t
SD
t
HD
t
LZWE
ADDRESS
D
IN
CE
WE
D
OUT
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
2. I/O will assume the High-Z state if
OE
= V
IH
.
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCE
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CE
WE
D
OUT
D
IN
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| IS61C67-15N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-20N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-25N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
| IS61C67-L15N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C64B-10J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-10N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS61C64B-10T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS61C64B-12J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-12N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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