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参数资料
| 型号： | IS61C64B |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K的× 8高速CMOS静态RAM |
| 文件页数： | 5/9页 |
| 文件大小： | 52K |
| 代理商： | IS61C64B |
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IS61C64B
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/01/02
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
–10 ns
-12 ns
Min.
-15 ns
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
1
(2)
CE
to Low-Z Output
t
HZCE
(2)
CE
to High-Z Output
Parameter
Min.
Max.
Max.
Min.
Max.
Unit
Read Cycle Time
10
—
12
—
15
—
ns
Address Access Time
—
10
—
12
—
15
ns
Output Hold Time
2
—
2
—
2
—
ns
CE
Access Time
—
10
—
12
—
15
ns
OE
Access Time
—
5
—
6
—
7
ns
OE
to Low-Z Output
0
—
0
—
0
—
ns
OE
to High-Z Output
—
5
—
6
—
6
ns
2
—
3
—
3
—
ns
—
5
—
7
—
8
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1a and 1b
AC TEST LOADS
Figure 1a.
480
30 pF
Including
jig and
scope
255
OUTPUT
5V
480
5 pF
Including
jig and
scope
255
OUTPUT
5V
Figure 1b.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61C64B-10J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-10N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS61C64B-10T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| IS61C64B-12J | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B-12N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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