- 您现在的位置：买卖IC网 > PDF目录299227 > IS61LPD25636A-200TQ (INTEGRATED SILICON SOLUTION INC) 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM PDF资料下载
参数资料
| 型号： | IS61LPD25636A-200TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 256K X 36 CACHE SRAM, 3.1 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 2/32页 |
| 文件大小： | 311K |
| 代理商： | IS61LPD25636A-200TQ |
第1页当前第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
12/13/06
IS61VPD25636A, IS61VPD51218A, IS61LPD25636A, IS61LPD51218A
ISSI
PARTIAL TRUTH TABLE
Function
GW
BWE
BWa
BWb
BWc
BWd
Read
H
X
Read
H
L
H
Write Byte 1
H
L
H
Write All Bytes
H
L
Write All Bytes
L
X
TRUTH TABLE(1-8)
OPERATION
ADDRESS
CE
CE2
CE2 CE2
ZZ
ADSP
ADSP ADSC
ADSC
ADSC ADV
ADV
WRITE
WRITE OE
OE
CLK
DQ
Deselect Cycle, Power-Down
None
H
X
L
X
L
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
H
L
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
H
L
X
L-H
High-Z
Snooze Mode, Power-Down
None
X
H
X
High-Z
Read Cycle, Begin Burst
External
L
H
L
X
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
X
H
L-H
High-Z
Write Cycle, Begin Burst
External
L
H
L
H
L
X
L
X
L-H
D
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L-H
High-Z
Read Cycle, Continue Burst
Next
X
L
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
X
L
H
L
H
L-H
High-Z
Read Cycle, Continue Burst
Next
H
X
L
X
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
H
X
L
X
H
L
H
L-H
High-Z
Write Cycle, Continue Burst
Next
X
L
H
L
X
L-H
D
Write Cycle, Continue Burst
Next
H
X
L
X
H
L
X
L-H
D
Read Cycle, Suspend Burst
Current
X
L
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
X
L
H
L-H
High-Z
Read Cycle, Suspend Burst
Current
H
X
L
X
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
H
X
L
X
H
L-H
High-Z
Write Cycle, Suspend Burst
Current
X
L
H
L
X
L-H
D
Write Cycle, Suspend Burst
Current
H
X
L
X
H
L
X
L-H
D
NOTE:
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW.
2. For
WRITE, L means one or more byte write enable signals (BWa-d) and BWE are LOW or GW is LOW. WRITE = H for all
BWx, BWE, GW HIGH.
3.
BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s and
DQPc.
BWd enables WRITEs to DQd’s and DQPd. DQPa and DQPb are available on the x18 version. DQPa-DQPd are
available on the x36 version.
4. All inputs except
OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation,
OE must be HIGH before the input data setup time and held HIGH during
the input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8.
ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte
write enable signals and
BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for
clarification.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LPD25636A-200TQ2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200TQI | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-250B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51236A-200B3 | 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LPD25636A-200TQ2I | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200TQI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200TQLI | 功能描述:静态随机存取存储器 8M (256Kx36) 200MHz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LPD25636A-200TQLI-TR | 功能描述:静态随机存取存储器 8M (256Kx36) 200MHz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LPD25636A-250B2 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
发布紧急采购，3分钟左右您将得到回复。