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参数资料
| 型号： | IS61LPD25636A |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 256K × 36，为512k × 18 9 MB的同步流水线，双循环取消选择静态RAM |
| 文件页数： | 4/32页 |
| 文件大小： | 216K |
| 代理商： | IS61LPD25636A |
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12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/09/05
IS61VPD25636A, IS61VPD51218A, IS61LPD25636A, IS61LPD51218A
ISSI
OPERATING RANGE (IS61LPDXXXXX)
Range
Ambient Temperature
VDD
VDDQ
Commercial
0°C to +70°C
3.3V + 5%
3.3 / 2.5V + 5%
Industrial
–40°C to +85°C
3.3V + 5%
3.3 / 2.5V + 5%
OPERATING RANGE (IS61VPDXXXXX)
Range
Ambient Temperature
VDD
VDDQ
Commercial
0°C to +70°C
2.5V + 5%
Industrial
–40°C to +85°C
2.5V + 5%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
3.3V
2.5V
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –4.0 mA (3.3V)
2.4
—
2.0
—
V
IOH = –1.0 mA (2.5V)
VOL
Output LOW Voltage
IOL = 8.0 mA (3.3V)
—
0.4
—
0.4
V
IOL = 1.0 mA (2.5V)
VIH
Input HIGH Voltage
2.0
VDD + 0.3
1.7
VDD + 0.3
V
VIL
Input LOW Voltage
-0.3
0.8
-0.3
0.7
V
ILI
Input Leakage Current
Vss
≤ VIN ≤ VDD(1)
-5
5
-5
5
A
ILO
Output Leakage Current Vss
≤ VOUT ≤ VDDQ,-5
5
-5
5
A
OE = VIH
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-250
-200
MAX
Symbol Parameter
Test Conditions
Temp.range
x18
x36
x18
x36
Unit
ICC
AC Operating
Device Selected,
Com.
275
250
mA
Supply Current
OE = VIH, ZZ
≤ VIL,IND.
300
275
All Inputs
≤ 0.2V or ≥ VDD – 0.2V,
Cycle Time
≥ tKC min.
ISB
Standby Current
Device Deselected,
COM.
150
mA
TTL Input
VDD = Max.,
Ind.
150
All Inputs
≤ VIL or ≥ VIH,
ZZ
≤ VIL, f = Max.
ISBI
Standby Current
Device Deselected,
Com.
100
mA
CMOS Input
VDD = Max.,
Ind.
105
VIN
≤ VSS + 0.2V or ≥VDD – 0.2V
f = 0
ISB2
Sleep Mode
ZZ>VIH
Com.
50
mA
Ind.
60
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100A maximum leakage current when tied to
≤
VSS + 0.2V or
≥ VDD – 0.2V.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LPD51236A-200B3 | 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51236A-200B3I | 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51236A-200TQ | 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51236A-200TQI | 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51236A-200TQLI | 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LPD25636A-200B2 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B2I | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B3I | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200TQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
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