- 您现在的位置：买卖IC网 > PDF目录299228 > IS61LPD51236A (Integrated Silicon Solution, Inc.) 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM PDF资料下载
参数资料
| 型号： | IS61LPD51236A |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 为512k × 36，1024K × 18 18MB的同步流水线，双循环取消选择静态RAM |
| 文件页数： | 2/29页 |
| 文件大小： | 219K |
| 代理商： | IS61LPD51236A |
第1页当前第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
02/03/06
IS61VPD51236A, IS61VPD102418A, IS61LPD51236A ,IS61LPD102418A
ISSI
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or No Connect)
External Address
1st Burst Address
2nd Burst Address
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
TSTG
Storage Temperature
–55 to +150
°C
PD
Power Dissipation
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT Voltage Relative to Vss for I/O Pins
–0.5 to VDDQ + 0.5
V
VIN
Voltage Relative to Vss for
–0.5 to VDD + 0.5
V
for Address and Control Inputs
VDD
Voltage on VDD Supply Relative to Vss
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or
electric fields; however, precautions may be taken to avoid application of any voltage higher than
maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LPS102418A | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12832A-200B2I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12832A-200B3 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12832A-200B3I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12832A-200TQ | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LPD51236A-200B3 | 功能描述:静态随机存取存储器 18Mb 512Kx36 200MHz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LPD51236A-200B3I | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,3.3V or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LPD51236A-200B3I-TR | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,3.3V or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LPD51236A-200B3-TR | 功能描述:静态随机存取存储器 18Mb 512Kx36 200MHz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LPD51236A-200TQ | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
发布紧急采购，3分钟左右您将得到回复。