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参数资料
| 型号： | IS61LPS51218A |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 256K × 36，为512k × 18 9 MB的同步流水线，单周期取消选择静态RAM |
| 文件页数： | 2/32页 |
| 文件大小： | 217K |
| 代理商： | IS61LPS51218A |
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10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/29/05
IS61VPS25636A, IS61LPS25636A, IS61VPS51218A, IS61LPS51218A
ISSI
PARTIAL TRUTH TABLE
Function
GW
BWE
BWa
BWb
BWc
BWd
Read
H
X
Read
H
L
H
Write Byte 1
H
L
H
Write All Bytes
H
L
Write All Bytes
L
X
TRUTH TABLE(1-8)
OPERATION
ADDRESS
CE
CE CE2
CE2
CE2 CE–2 ZZ ADSP
ADSP
ADSP ADSC
ADSC
ADSC ADV
ADV
WRITE
WRITE OE
OE
CLK
DQ
Deselect Cycle, Power-Down
None
H
X
L
X
L
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
H
L
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
H
L
X
L-H
High-Z
Snooze Mode, Power-Down
None
X
H
X
High-Z
Read Cycle, Begin Burst
External
L
H
L
X
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
X
H
L-H
High-Z
Write Cycle, Begin Burst
External
L
H
L
H
L
X
L
X
L-H
D
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L-H
High-Z
Read Cycle, Continue Burst
Next
X
L
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
X
L
H
L
H
L-H
High-Z
Read Cycle, Continue Burst
Next
H
X
L
X
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
H
X
L
X
H
L
H
L-H
High-Z
Write Cycle, Continue Burst
Next
X
L
H
L
X
L-H
D
Write Cycle, Continue Burst
Next
H
X
L
X
H
L
X
L-H
D
Read Cycle, Suspend Burst
Current
X
L
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
X
L
H
L-H
High-Z
Read Cycle, Suspend Burst
Current
H
X
L
X
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
H
X
L
X
H
L-H
High-Z
Write Cycle, Suspend Burst
Current
X
L
H
L
X
L-H
D
Write Cycle, Suspend Burst
Current
H
X
L
X
H
L
X
L-H
D
NOTE:
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW.
2. For
WRITE, L means one or more byte write enable signals (BWa-d) and BWE are LOW or GW is LOW. WRITE = H for all
BWx, BWE, GW HIGH.
3.
BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s and
DQPc.
BWd enables WRITEs to DQd’s and DQPd. DQPa and DQPb are available on the x18 version. DQPa-DQPd are
available on the x36 version.
4. All inputs except
OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation,
OE must be HIGH before the input data setup time and held HIGH during the
input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8.
ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write
enable signals and
BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LPS51218A_12 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-200B2 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-200B2I | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-200B3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-200B3I | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
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