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| 型号： | IS61NLP12832A-250B3I |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| 中文描述： | 128K X 32 ZBT SRAM, 2.6 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 |
| 文件页数： | 5/29页 |
| 文件大小： | 235K |
| 代理商： | IS61NLP12832A-250B3I |
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
13
Rev. A
10/03/06
ISSI
IS61NLP12832A
IS61NLP12836A/IS61NVP12836A
IS61NLP25618A/IS61NVP25618A
LINEAR BURST ADDRESS TABLE (MODE = VSS)
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
TSTG
Storage Temperature
–65 to +150
°C
PD
Power Dissipation
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT
Voltage Relative to VSS for I/O Pins
–0.5 to VDDQ + 0.5
V
VIN
Voltage Relative to VSS for
–0.5 to 4.6
V
for Address and Control Inputs
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,
precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance
circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
0,0
1,0
0,1
A1', A0' = 1,1
OPERATING RANGE (IS61NLPx)
Range
Ambient Temperature
VDD
VDDQ
Commercial
0°C to +70°C
3.3V ± 5%
3.3V / 2.5V ± 5%
Industrial
-40°C to +85°C
3.3V ± 5%
3.3V / 2.5V ± 5%
OPERATING RANGE (IS61NVPx)
Range
Ambient Temperature
VDD
VDDQ
Commercial
0°C to +70°C
2.5V ± 5%
Industrial
-40°C to +85°C
2.5V ± 5%
相关PDF资料 |
PDF描述 |
|---|---|
| IS61NLP12832A-250TQ | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| IS61NLP12832A-250TQI | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| IS61NLP12836A-200B2 | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| IS61NLP12836A-200B2I | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| IS61NLP12836A-200B3 | 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61NLP12836-133TQ | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Quad 3.3V 4.5M-Bit 128K x 36 4.2ns 100-Pin TQFP |
| IS61NLP12836A-200TQI | 功能描述:静态随机存取存储器 4Mb 128Kx36 200Mhz 3.3v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NLP12836A-200TQI-TR | 功能描述:静态随机存取存储器 4Mb 128Kx36 200Mhz 3.3v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NLP12836A-200TQLI | 功能描述:静态随机存取存储器 4Mb 128Kx36 200Mhz 3.3v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61NLP12836A-200TQLI-TR | 功能描述:静态随机存取存储器 4Mb 128Kx36 200Mhz 3.3v I/O RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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