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参数资料
| 型号： | IS61SP25618-133TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | Octal Transparent D-Type Latches With 3-State Outputs 20-SSOP -40 to 85 |
| 中文描述： | 256K X 18 CACHE SRAM, 4 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 14/15页 |
| 文件大小： | 120K |
| 代理商： | IS61SP25618-133TQ |
IS61SP25616
IS61SP25618
ISSI
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
1.5 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
Output
Buffer
ZO = 50
1.5V
50
30 pF
317
5 pF
Including
jig and
scope
351
OUTPUT
3.3V
Figure 1
Figure 2
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| IS61SP25618-133TQI | Octal Transparent D-Type Latches With 3-State Outputs 20-SSOP -40 to 85 |
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相关代理商/技术参数 |
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| IS61SP6464-100PQ | 制造商:Integrated Silicon Solution Inc 功能描述: |
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| IS61SP6464-6TQ | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61VF102418A-6.5B3 | 功能描述:静态随机存取存储器 18Mb,Flow-Through,Sync,1Mb x 18,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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