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参数资料
| 型号： | IS62C1024-70WI |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K的× 8高速CMOS静态RAM |
| 文件页数： | 3/8页 |
| 文件大小： | 423K |
| 代理商： | IS62C1024-70WI |
Integrated Circuit Solution Inc.
3
SR016-0B
IS62C1024
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
–0.5 to +7.0
V
T
BIAS
Temperature Under Bias
–10 to +85
°C
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.5
W
I
OUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –1.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 2.1 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
–5
5
μA
Ind.
–10
10
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
Com.
–5
5
μA
Ind.
–10
10
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-35 ns
Min. Max.
-45 ns
Min. Max.
-55 ns
Min. Max.
-70 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
I
CC
Vcc Dynamic Operating
V
CC
= Max.,
CE
= V
IL
Com.
—
150
—
135
—
120
—
90
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
—
160
—
145
—
130
—
100
I
SB
1
TTL Standby Current
V
CC
= Max.,
V
IN
= V
IH
or V
IL
,
CE1
≥
V
IH
,
or CE2
≤
V
IL
, f = 0
Com.
—
40
—
40
—
40
—
40
mA
(TTL Inputs)
Ind.
—
60
—
60
—
60
—
60
I
SB
2
CMOS Standby
V
CC
= Max.,
CE1
≥
V
CC
– 0.2V,
CE2
≤
0.2V, V
IN
> V
CC
– 0.2V,
or V
IN
≤
0.2V, f = 0
Com.
—
30
—
30
—
30
—
30
mA
Current (CMOS Inputs)
Ind.
—
40
—
40
—
40
—
40
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS62C10248AL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62C10248AL-55MLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62C10248AL-55TLI | 功能描述:静态随机存取存储器 8M (1Mx8) 55ns Async 静态随机存取存储器 5v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS62C10248AL-55TLI-TR | 功能描述:静态随机存取存储器 8M (1Mx8) 55ns Async 静态随机存取存储器 5v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS62C1024AL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:128K x 8 LOW POWER CMOS STATIC RAM |
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