参数资料
型号: IS62C1024-70WI
英文描述: 128K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 128K的× 8高速CMOS静态RAM
文件页数: 7/8页
文件大小: 423K
代理商: IS62C1024-70WI
Integrated Circuit Solution Inc.
7
SR016-0B
IS62C1024
WRITE CYCLE NO. 2 (
CE1
, CE2 Controlled)
(1,2)
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
Notes:
1. The internal write time is defined by the overlap of
CE1
LOW, CE2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
= V
IH
.
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IS62C10248AL-55TLI-TR 功能描述:静态随机存取存储器 8M (1Mx8) 55ns Async 静态随机存取存储器 5v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
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