参数资料
型号: IS62LV256-45N
英文描述: x8 SRAM
中文描述: x8的SRAM
文件页数: 4/10页
文件大小: 91K
代理商: IS62LV256-45N
IS62LV25616LL
ISSI
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Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. A
05/04/01
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = 3.0V, IOH = –1 mA
2.2
V
VOL
Output LOW Voltage
VCC = 3.0V, IOL = 2.1 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC + 0.2
V
VIL(1)
Input LOW Voltage
–0.2
0.4
V
ILI
Input Leakage
GND
≤ VIN ≤ VCC
–11
A
ILO
Output Leakage
GND
≤ VOUT ≤ VCC, Outputs Disabled
–11
A
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to Vcc+0.3
V
TBIAS
Temperature Under Bias
–40 to +85
°C
VCC
Vcc Related to GND
–0.3 to +3.3
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
OPERATING RANGE
Range
Ambient Temperature
VCC Min.
VCC Max.
Commercial
0°C to +70°C
2.7V
3.15V
Industrial
–40°C to +85°C
2.7V
3.15V
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
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