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参数资料
| 型号： | IS65C256 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 32K x 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 32K的× 8低功耗CMOS静态RAM |
| 文件页数： | 4/11页 |
| 文件大小： | 74K |
| 代理商： | IS65C256 |
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/24/04
IS65C256
ISSI
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-20 ns
Symbol
t
RC
t
AA
t
OHA
t
ACS
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCS
(2)
t
HZCS
(2)
t
PU
(3)
t
PD
(3)
Parameter
Min.
Max.
Unit
Read Cycle Time
20
—
ns
Address Access Time
—
20
ns
Output Hold Time
3
—
ns
CS
Access Time
—
20
ns
OE
Access Time
—
8
ns
OE
to Low-Z Output
0
—
ns
OE
to High-Z Output
0
9
ns
CS
to Low-Z Output
3
—
ns
CS
to High-Z Output
0
9
ns
CS
to Power-Up
0
—
ns
CS
to Power-Down
—
18
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
DATA RETENTION CHARACTERISTICS
Symbol
V
DR
I
DR
1
I
DR
2
I
DR
3
Parameter
V
DD
for retention of data
Data retention current
Data retention current
Data retention current
Test Conditions
Options
Min.
2.0
—
—
—
typ
(1)
Max.
—
150
300
500
Units
V
μA
μA
μA
V
DR
= 3.0V
V
DR
= 3.0V
V
DR
= 3.0V
A1
A2
A3
50
50
50
Note:
2. Typical values are measured at V
DD
= 3V, T
A
= 25
o
C, and not 100% tested.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS65C256-20UA2-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS65C256AL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL_12 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-25TA3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-25TLA3 | 功能描述:静态随机存取存储器 256K (32Kx8) 25ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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