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参数资料
| 型号： | IS65C256 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 32K x 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 32K的× 8低功耗CMOS静态RAM |
| 文件页数： | 6/11页 |
| 文件大小： | 74K |
| 代理商： | IS65C256 |
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/24/04
IS65C256
ISSI
READ CYCLE NO. 2
(1,3)
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACS
t
LZCS
t
HZOE
HIGH-Z
DATA VALID
ADDRESS
OE
CS
D
OUT
t
HZCS
CS_RD2.eps
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CS
= V
IL
.
3. Address is valid prior to or coincident with
CS
LOW transitions.
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-20 ns
Min.
Symbol
t
WC
t
SCS
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
Parameter
Max.
Unit
Write Cycle Time
20
—
ns
CS
to Write End
13
—
ns
Address Setup Time to Write End
15
—
ns
Address Hold from Write End
1
—
ns
Address Setup Time
0
—
ns
WE
Pulse Width
13
—
ns
Data Setup to Write End
10
—
ns
Data Hold from Write End
0
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CS
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the write.
4. Tested with
OE
HIGH.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS65C256-20UA2-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS65C256AL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL_12 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-25TA3 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-25TLA3 | 功能描述:静态随机存取存储器 256K (32Kx8) 25ns 5V Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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