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参数资料
| 型号： | IS66WVD409616ALL-7010BLI |
| 元件分类： | SRAM |
| 英文描述： | 4M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 |
| 封装： | 8 X 6 MM, MO-207, VFBGA-54 |
| 文件页数： | 1/52页 |
| 文件大小： | 1128K |
| 代理商： | IS66WVD409616ALL-7010BLI |
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IS66WVD409616ALL
Advanced Information
1
Rev.00A | January 2010
www.issi.com - SRAM@issi.com
Overview
The IS66WVD409616ALL is an integrated memory device containing 64Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a
multiplexed address and data bus scheme to minimize pins and includes a industry standard burst
mode for increased read and write bandwidth. The device includes several power saving modes :
Reduced Array Refresh mode where data is retained in a portion of the array and Temperature
Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a
standard asynchronous mode and high performance burst mode. The die has separate power rails,
VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Single device supports asynchronous and burst
operation
Mixed Mode supports asynchronous write and
synchronous read operation
Dual voltage rails for optional performance
VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
Multiplexed address and data bus
ADQ0~ADQ15
Asynchronous mode read access : 70ns
Burst mode for Read and Write operation
4, 8, 16 or Continuous
Low Power Consumption
Asynchronous Operation < 25 mA
Burst operation < 45 mA (@133Mhz)
Standby < 140 uA(max.)
Deep power-down (DPD) < 3uA (Typ)
Low Power Feature
Reduced Array Refresh
Temperature Controlled Refresh
Operation Frequency up to 133MHz
Operating temperature Range
Industrial -40°C~85°C
Package: 54-ball VFBGA
64Mb Async and Burst CellularRAM 2.0
Features
Copyright 2009 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS66WVE1M16ALL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1.8V Core Async/Page PSRAM |
| IS66WVE1M16ALL-70BLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1.8V Core Async/Page PSRAM |
| IS66WVE1M16BLL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:3.0V Core Async/Page PSRAM |
| IS66WVE1M16BLL-55BLI | 功能描述:静态随机存取存储器 16Mb 1M x 16 55ns Pseudo 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS66WVE1M16BLL-55BLI-TR | 功能描述:静态随机存取存储器 16Mb 1M x 16 55ns Pseudo 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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