参数资料
型号: ISB35279
厂商: 意法半导体
英文描述: HCMOS STRUCTURED ARRAY
中文描述: HCMOS结构化阵列
文件页数: 5/15页
文件大小: 345K
代理商: ISB35279
buffers can be tristated by this function including
buffers that normally do not tristate. This test func-
tion also turns off all pull up or down devices and
shuts down all differential receivers and converts
them into standard CMOS receivers. Inside the
predriver is a section of specialized transistors used
to create the receiver functions. This section in-
cludes specialized non salicide protection resistor
diodes to further protect the gates of the receiver
devices from ESD and latch up. Also present in this
section are devices that can be utilized to form
various parameteriseable pull up, pull down and
buskeeper functions. A full set of standard receivers
with pull up and pull down devices is present in the
library. The technologies supported match the out-
put buffer capabilities and include, LVCMOS,
LVTTL, GTL, CTL, Differential, etc. and a five volt
interface capability. The last section of devices that
make up the I/O ring is a set of custom designed
(for compactness) scan latches and supporting cir-
cuits that can be utilized to form various types of
scan circuits conforming to the standard that the
customer is utilizing in his systems. These circuits
can be combined with internal transistors if needed.
Programmable
Pitch Bond
Pad
Input &
Control
SlewRate
Tristate
Buskeeper
Level Shifter
JTAG
Guardring
Die Core
Edge of Die
4mA
selected
Segmented
Output
River of Drive
Transistors
ISB35_PB
Figure 3. ISB35000 I/O Technology
ISB35000 SERIES
5/15
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