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参数资料
| 型号： | ISL1218 |
| 厂商： | Intersil Corporation |
| 英文描述： | Low Power RTC with Battery Backed SRAM(具有电池供电SRAM的低功率RTC) |
| 中文描述： | 低功耗RTC与电池供电的SRAM（具有电池供电的SRAM的低功率实时时钟） |
| 文件页数： | 3/21页 |
| 文件大小： | 351K |
| 代理商： | ISL1218 |
3
FN6313.0
June 22, 2006
Absolute Maximum Ratings
Thermal Information
Voltage on V
DD
, V
BAT
, SCL, SDA, and IRQ/F
OUT
Pins
(respect to ground). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V
Voltage on X1 and X2 Pins
(respect to ground). . . . . . . . . . . .-0.5V to V
DD
+ 0.5 (V
DD
Mode)
-0.5V to V
BAT
+ 0.5 (V
BAT
Mode)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . .300°C
ESD Rating (Human Body Model). . . . . . . . . . . . . . . . . . . . . . .>2kV
ESD Rating (Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . .>175V
Thermal Resistance (Typical, Note 1)
8 Ld MSOP Package . . . . . . . . . . . . . . . . . . . . . . . .
8 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . .
Moisture Sensitivity for MSOP Package
(see Technical Brief TB363). . . . . . . . . . . . . . . . . . . . . . . . Level 2
Moisture Sensitivity for SOIC Package
(see Technical Brief TB363). . . . . . . . . . . . . . . . . . . . . . . . Level 1
Maximum Junction Temperature (Plastic Package). . . . . . . . .150°C
θ
JA
(°C/W)
130
110
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
DC Operating Characteristics – RTC
Temperature = -40°C to +85°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
(Note 5)
MAX
UNITS
NOTES
V
DD
Main Power Supply
2.7
5.5
V
V
BAT
Battery Supply Voltage
1.8
5.5
V
I
DD1
Supply Current
V
DD
= 5V
2
6
μA
2, 3
V
DD
= 3V
1.2
4
μA
I
DD2
Supply Current With I
2
C Active
V
DD
= 5V
40
120
μA
2, 3
I
DD3
Supply Current (Low Power Mode)
V
DD
= 5V, LPMODE = 1
1.4
5
μA
2, 7
I
BAT
Battery Supply Current
V
BAT
= 3V
400
950
nA
2
I
BATLKG
Battery Input Leakage
V
DD
= 5.5V, V
BAT
= 1.8V
100
nA
I
LI
Input Leakage Current on SCL
100
nA
I
LO
I/O Leakage Current on SDA
100
nA
V
TRIP
V
BAT
Mode Threshold
1.6
2.2
2.64
V
V
TRIPHYS
V
TRIP
Hysteresis
10
35
60
mV
V
BATHYS
V
BAT
Hysteresis
10
50
100
mV
IRQ/F
OUT
V
OL
Output Low Voltage
V
DD
= 5V, I
OL
= 3mA
0.4
V
V
DD
= 2.7V, I
OL
= 1mA
0.4
V
I
LO
Output Leakage Current
V
DD
= 5.5V
V
OUT
= 5.5V
100
400
nA
Power-Down Timing
Temperature = -40°C to +85°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
(Note 5)
MAX
UNITS
NOTES
V
DD SR-
V
DD
Negative Slewrate
10
V/ms
4
Serial Interface Specifications
Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(Note 5)
MAX
UNITS
NOTES
SERIAL INTERFACE SPECS
V
IL
SDA and SCL Input Buffer LOW
Voltage
-0.3
0.3 x
V
DD
V
DD
+
0.3
V
V
IH
SDA and SCL Input Buffer HIGH
Voltage
0.7 x
V
DD
V
ISL1218
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| ISL1219 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Low Power RTC with Battery Backed SRAM and Event Detection |
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