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参数资料
| 型号： | ISL22349 |
| 厂商： | Intersil Corporation |
| 英文描述： | Low Noise, Low Power, I2C Bus, 128 Taps, Wiper Only(低噪声,低功率，I2C总线, 128抽头电位器) |
| 中文描述： | 低噪声，低功耗，I2C总线，128抽头，雨刷，只有（低噪声，低功率和I2C总线，128抽头电位器） |
| 文件页数： | 4/12页 |
| 文件大小： | 332K |
| 代理商： | ISL22349 |
4
FN6331.2
September 15, 2006
Operating Specifications
Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(NOTE 5)
MAX
UNIT
I
CC1
V
CC
Supply Current (volatile
write/read)
V
CC
= +3.6V, 10k DCP, f
SCL
= 400kHz; (for
I
2
C active, read and write states)
2.5
mA
V
CC
Supply Current (volatile
write/read, non-volatile read)
V
CC
= +3.6V, 50k DCP, f
SCL
= 400kHz; (for
I
2
C active, read and write states)
0.65
mA
I
CC2
V
CC
Supply Current (non-volatile
write/read)
V
CC
= +5.5V, 10k DCP, f
SCL
= 400kHz; (for
I
2
C active, read and write states)
4.0
mA
V
CC
Supply Current (non-volatile
write/read)
V
CC
= +5.5V, 50k DCP, f
SCL
= 400kHz; (for
I
2
C active, read and write states)
3.0
mA
I
SB
V
CC
Current (standby)
V
CC
= +5.5V, 10k DCP, I
2
C interface in
standby state
2.4
mA
V
CC
= +3.6V, 10k DCP, I
2
C interface in
standby state
525
μA
V
CC
= +5.5V, 50k DCP, I
2
C interface in
standby state
1.6
mA
V
CC
= +3.6V, 50k DCP, I
2
C interface in
standby state
350
μA
I
SD
V
CC
Current (shutdown)
V
CC
= +5.5V @ +85°C, I
2
C interface in
standby state
5
μA
V
CC
= +5.5V @ +125°C, I
2
C interface in
standby state
6.5
μA
V
CC
= +3.6V @ +85°C, I
2
C interface in
standby state
4
μA
V
CC
= +3.6V @ +125°C, I
2
C interface in
standby state
5.5
μA
I
LkgDig
Leakage Current, at Pins A0, A1, A2,
SHDN, SDA, and SCL
Voltage at pin from GND to V
CC
-1
1
μA
t
WRT
(Note 13)
DCP Wiper Response Time
SCL falling edge of last bit of DCP data byte
to wiper new position
1.5
μs
t
ShdnRec
(Note 13)
DCP Recall Time from Shutdown
Mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
μs
SCL falling edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
μs
Vpor
Power-on Recall Voltage
Minimum V
CC
at which memory recall occurs
2.0
2.6
V
VccRamp
V
CC
Ramp Rate
0.2
V/ms
t
D
Power-up Delay
Vcc above Vpor, to DCP Initial Value
Register recall completed, and I
2
C Interface
in standby state
3
ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T < +55
°
C
50
Years
t
WC
(Note 14)
Non-volatile Write Cycle Time
12
20
ms
ISL22349
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